Characterization of Al2O3-HfO2-Al 2O3 sandwiched MIM capacitor under DC and AC stresses

Solid-State Electronics

Volumn 79, Issue , 2013, Pages 218-222

  Kwak, Ho Young ^a   Kwon, Hyuk Min ^a   Jung, Yi Jung ^a   Kwon, Sung Kyu ^a   Jang, Jae Hyung ^a   Choi, Woon Il ^a   Ha, Man Lyun ^b   Lee, Ju Il ^b   Lee, Song Jae ^a   Lee, Hi Deok ^a  

^a Chungnam National University   (South Korea)

^b Dongbu HiTek Co Ltd   (South Korea)

Author keywords

AHA (Al2O3 HfO 2 Al2O3); Charge trapping and de trapping; CVS (constant voltage stress); MIM (Metal Insulator Metal); Unipolar and bipolar voltage stress; VCC (voltage coefficient of capacitance)

Indexed keywords

AHA (AL2O3-HFO 2-AL2O3); BIPOLAR VOLTAGES; CONSTANT VOLTAGE STRESS; DE-TRAPPING; METAL INSULATOR METALS; VOLTAGE COEFFICIENT OF CAPACITANCES;

ALUMINUM; CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; HAFNIUM; HAFNIUM OXIDES;

MIM DEVICES;

EID: 84869491959     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2012.09.007     Document Type: Article

References (19)

1. C.T. Black, K.W. Guarini, Y. Zhang, H. Kim, J. Benedict, and E. Sikorski IEEE Electron Dev Lett 24 2002 387 389
2. S.J. Kim, B.H. Cho, M.F. Li, X. Yu, C. Zhu, and A. Chin Kwong DL IEEE Electron Dev Lett 24 2002 387 389
3. H. Hu, C. Zhu, Y.F. Lu, H.Y. Wu, T. Liew, and M.F. Li J Appl Phys 94 2003 551 557
4. Remmel T, Ramprasad P, Walls J. In: Proc int rel phys symp; 2003. p. 277-81.
5. S.W. Jeong, H.J. Lee, K.s. Kim, M.T. You, Y. Roh, and T. Noguchi Thin Solid Films 515 2006 526 530
6. T.H. Pemg, C.H. Chien, C.W. Chen, and P. Lehnen Chang CY Thin Solid Films 469 2004 545 549
7. S.B. Chen, C.H. Lai, A. Chin, and J.C. Hsieh Liu J IEEE Electron Dev Lett 23 2002 185 187
8. H.M. Kwon, I.S. Han, S.U. Park, J.D. Bok, Y.J. Jung, and H.S. Shin Jpn J Appl Phys 50 2011 04DD02-1
9. Ishikawa T, Kodama D, Matsui Y, Hiratani M, Furusawa T, Hisamoto D, In: IEDM tech dig; 2002. p. 940-2.
10. M.Y. Yang, and D.S. Yu Chin A Electrochem Solid-State Lett 151 2004 F162 F165
11. S.J. Ding, H. Hu, C. Zhu, S.J. Kim, and X. Yu IEEE Trans Electron Dev 51 886-89 2004 4
12. H. Hu, C. Zhu, Y.F. Lu, M.F. Li, and B.J. Cho Choi WK IEEE Electron Dev Lett 23 2002 514 516
13. C.C. Hung, A.S. Oates, H.C. Lin, Y.E. Chang, and J.L. Wang IEEE Trans Dev Mater Rel 7 2007 462 467
14. Kwak HY, Kwon HM, Kwon SK, et al. In: Conference publication in int symp semiconductor device; 2011.
15. X. Yu, C. Zhu, H. Hu, A. Chin, and M.F. Li IEEE Electron Dev Lett 24 2003 63 65
16. ITRS Roadmap; 2007.
17. S.W. Kim, S.K. Lee, and Y.D. Kim Appl Phys Lett 96 2010 262904
18. Scott RS, and Dumin NA, et al. In: IEEE reliability phys symp; 2005 p. 131-41.
19. S.H. Wu, C.K. Ceng, T.H. Hou, and B.S. Chiou Jpn J Appl Phys 49 2010 04DB16-1