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Applied Physics Letters

Volumn 96, Issue 26, 2010, Pages

Effects of electrical stress on the leakage current characteristics of multilayer capacitor structures

(4) Kim, Soon Wook a Lee, Sung Kyun a Do Kim, Young b Kim, Sibum a

a MagnaChip Semiconductor Ltd (South Korea)

b Hanyang University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONSTANT VOLTAGE STRESS; ELECTRICAL STRESS; HIGH-K DIELECTRIC; INITIAL STAGES; METAL-INSULATOR-METAL CAPACITORS; MULTILAYER CAPACITORS; MULTILAYER STRUCTURES; TIME DEPENDENT; VOLTAGE DROP;

ALUMINUM; CAPACITANCE; CAPACITORS; ELECTRIC FIELDS; HAFNIUM COMPOUNDS; METAL INSULATOR BOUNDARIES; MULTILAYERS;

LEAKAGE CURRENTS;

EID: 77954321806 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3456731 Document Type: Article

Times cited : (8)

References (8)

1
- 77954338838
- ITRS reports edition [Online]. Available.
- ITRS reports 2007 edition [Online]. Available: http://www.itrs.net.
- (2007)

2
- 67649378973
- EDLEDZ 0741-3106,. 10.1109/LED.2009.2020613
- W. He, L. Zhang, D. S. H. Chan, and B. J. Cho, IEEE Electron Device Lett. EDLEDZ 0741-3106 30, 623 (2009). 10.1109/LED.2009.2020613
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 623
- He, W.¹ Zhang, L.² Chan, D.S.H.³ Cho, B.J.⁴

3
- 77954326448
- (IEEE, New York),.
- K. Takeda, R. Yamada, T. Imai, T. Fujiwara, T. Hashimoto, and T. Ando, International Electron Devices Meeting, 2006 (IEEE, New York, 2006), p. 1.
- (2006) International Electron Devices Meeting, 2006 , pp. 1
- Takeda, K.¹ Yamada, R.² Imai, T.³ Fujiwara, T.⁴ Hashimoto, T.⁵ Ando, T.⁶

4
- 57849087524
- ZZZZZZ 1535-864X,. 10.1535/itj.1202.06
- J. Hicks, D. Bergstrom, M. Hattendorf, J. Jopling, J. Maiz, S. W. Pae, C. Prasad, and J. Wiedemer, Intel Technol. J. ZZZZZZ 1535-864X 12, 131 (2008). 10.1535/itj.1202.06
- (2008) Intel Technol. J. , vol.12 , pp. 131
- Hicks, J.¹ Bergstrom, D.² Hattendorf, M.³ Jopling, J.⁴ Maiz, J.⁵ Pae, S.W.⁶ Prasad, C.⁷ Wiedemer, J.⁸

5
- 23844440928
- Soft breakdown of hafnium oxynitride gate dielectrics
- DOI 10.1063/1.1977198, 024503
- J. C. Wang, D. C. Shie, and C. L. Lee, J. Appl. Phys. JAPIAU 0021-8979 98, 024503 (2005). 10.1063/1.1977198 (Pubitemid 41144585)
- (2005) Journal of Applied Physics , vol.98 , Issue.2 , pp. 1-5
- Wang, J.C.¹ Shie, D.C.² Lei, T.F.³ Lee, C.L.⁴

6
- 5044249481
- EDLEDZ 0741-3106,. 10.1109/LED.2004.835791
- S. J. Ding, H. Hu, C. Zhu, M. F. Li, S. J. Kim, B. J. Cho, D. S. H. Chan, M. B. Yu, and D. -L. Kwong, IEEE Electron Device Lett. EDLEDZ 0741-3106 25, 681 (2004). 10.1109/LED.2004.835791
- (2004) IEEE Electron Device Lett. , vol.25 , pp. 681
- Ding, S.J.¹ Hu, H.² Zhu, C.³ Li, M.F.⁴ Kim, S.J.⁵ Cho, B.J.⁶ Chan, D.S.H.⁷ Yu, M.B.⁸ Kwong, D.-L.⁹

7
- 50249093233
- (IEEE, New York),.
- J. M. Park, M. W. Song, W. H. Kim, P. K. Park, Y. K. Jung, S. J. Won, J. H. Lee, N. I. Lee, and H. K. Kang, IEEE International Electron Devices Meeting, 2007 (IEEE, New York, 2007), p. 993.
- (2007) IEEE International Electron Devices Meeting, 2007 , pp. 993
- Park, J.M.¹ Song, M.W.² Kim, W.H.³ Park, P.K.⁴ Jung, Y.K.⁵ Won, S.J.⁶ Lee, J.H.⁷ Lee, N.I.⁸ Kang, H.K.⁹

8
- 0037096520
- PRBMDO 0163-1829,. 10.1103/PhysRevB.65.233106
- X. Zhao and D. Vanderbilt, Phys. Rev. B PRBMDO 0163-1829 65, 233106 (2002). 10.1103/PhysRevB.65.233106
- (2002) Phys. Rev. B , vol.65 , pp. 233106
- Zhao, X.¹ Vanderbilt, D.²

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