Growth-in-place deployment of in-plane silicon nanowires

Applied Physics Letters

Volumn 99, Issue 20, 2011, Pages

  Yu, Linwei ^a   Chen, Wanghua ^b   O'Donnell, Benedict ^a   Patriarche, Gilles ^c   Bouchoule, Sophie ^c   Pareige, Philippe ^b   Rogel, Regis ^d   Claire Salaun, Anne ^d   Pichon, Laurent ^d   Roca I Cabarrocas, Pere ^a  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^b UNIVERSITÉ ET INSA DE ROUEN   (France)

^c CNRS   (France)

^d UNIVERSITÉ DE RENNES 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

3-DIMENSIONAL; ATOM PROBE TOMOGRAPHY; IN-PLANE; INTRINSIC DOPING; LASER-ASSISTED; ON/OFF RATIO; SILICON NANOWIRES; SOLID BASIS; SOLID-LIQUID-SOLID GROWTHS; UPSCALING;

CRYSTAL ATOMIC STRUCTURE; FIELD EFFECT TRANSISTORS; HOLE MOBILITY; NANOWIRES;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 81855198016     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3659895     Document Type: Article

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