Development of MBE II-VI epilayers on GaAs(211)B

Journal of Electronic Materials

Volumn 41, Issue 10, 2012, Pages 2707-2713

  Jacobs, R N ^a   Nozaki, C ^a   Almeida, L A ^a   Jaime Vasquez, M ^a   Lennon, C ^b   Markunas, J K ^a   Benson, D ^a   Smith, P ^a   Zhao, W F ^c   Smith, D J ^c   Billman, C ^a   Arias, J ^d   Pellegrino, J ^a  

^a NIGHT VISION AND ELECTRONIC SENSORS DIRECTORATE   (United States)

^b US Army RDECOM CERDEC NVESD Ft Belvoirx   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

^d RAND CORPORATION   (United States)

Author keywords

CdTe; Gallium arsenide; HgCdTe; II VI semiconductors; IRFPA; Large area substrates; MBE

Indexed keywords

CDTE; HGCDTE; II-VI SEMICONDUCTOR; IRFPA; LARGE-AREA SUBSTRATES;

BUFFER LAYERS; CADMIUM TELLURIDE; ELECTRON MOBILITY; EPILAYERS; EPITAXIAL GROWTH; GALLIUM ARSENIDE; GERMANIUM; INDIUM ANTIMONIDES; LATTICE MISMATCH; MATERIALS PROPERTIES; MERCURY (METAL); MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; OPTIMIZATION; SEMICONDUCTING GALLIUM; SILICON; SURFACE MORPHOLOGY; X RAY DIFFRACTION;

SUBSTRATES;

EID: 84868563103     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-012-2218-z     Document Type: Conference Paper

References (19)

1. R. Sporken, S. Sivananthan, K.K. Mahavadi, G. Monfroy, M. Boukerche, and J.P. Faurie, Appl. Phys. Lett. 55, 1879 (1989).
2. N.K. Dhar, P.R. Boyd, M. Martinka, J.H. Dinan, L.A. Almeida, and N. Goldsman, J. Electron. Mater. 29, 748 (2000).
3. M. Carmody, J.G. Pasko, D. Edwall, R. Bailey, J. Arias, M. Groenert, L.A. Almeida, J.H. Dinan, Y. Chen, G. Brill, and N.K. Dhar, J. Electron. Mater. 35, 1417 (2006).
4. L.A. Almeida, L. Hirsch, M. Martinka, P.R. Boyd, and J.H. Dinan, J. Electron. Mater. 30, 608 (2001).
5. J.D. Benson, R.N. Jacobs, J.K. Markunas, M. Jaime-Vasquez, P.J. Smith, L.A. Almeida, M. Martinka, M.F. Vilela, and U. Lee, J. Electron. Mater. 37, 1231 (2008).
6. J.P. Zanatta, G. Badano, P. Ballet, C. Largeron, J. Baylet, O. Gravrand, J. Rothman, P. Castelein, J.P. Chamonal, A. Million, G. Destefanis, S. Mibord, E. Brochier, and P. Costa, J. Electron. Mater. 35, 1231 (2006).
7. M. Krishnamurthy, P.M. Petroff, and J.M. Arias, Appl. Phys. Lett. 73, 7952 (1993).
8. T.J. de Lyon, R.D. Rajavel, B.Z. Nosho, S. Terterian, M.L. Beliciu, P.R. Patterson, D.T. Chang, M.F. Boag-O'Brien, B.T. Holden, R.N. Jacobs, and J.D. Benson, J. Electron. Mater. 39, 1058 (2010).
9. S.M. Johnson, D.R. Rhiger, J.P. Rosenbeck, J.M. Peterson, S.M. Taylor, and M.E. Boyd, J. Vac. Sci. Technol. B10, 1499 (1992).
10. R.N. Jacobs, J. Markunas, J. Pellegrino, L.A. Almeida, M. Groenert, M. Jaime-Vasquez, N. Mahadik, C. Andrews, and S.B. Qadri, J. Cryst. Growth 310, 2960 (2008).
11. R.N. Jacobs, L.A. Almeida, J. Markunas, J. Pellegrino, M. Groenert, M. Jaime-Vasquez, N. Mahadik, C. Andrews, S.B. Qadri, T. Lee, and M. Kim. CS MANTECH Conference, April 14-17, 2008, Chicago, Illinois, USA.
12. M. Jaime-Vasquez, M. Martinka, A.J. Stoltz, R.N. Jacobs, J.D. Benson, L.A. Almeida, and J.K. Markunas, J. Electron. Mater. 37, 1247 (2008).
13. P. Abbott, L. Pillans, P. Knowles, and R.K. McEwen, Proc. SPIE 7660, 766035 (2010).
14. C. Lenon, A.E. Brown, R.N. Jacobs, L.A. Almeida, J.K. Markunas, J. Arias, and J. Pellegrino, J. Electron. Mater. (in this issue).
15. M. Jaime-Vasquez, R.N. Jacobs, L.A. Almeida, J.D. Benson, J.M. Arias, and J. Pellegrino, J. Electron. Mater. (in this issue).
16. J. Amon, J. Härtwig, W. Ludwig, and G. Müller, J. Cryst. Growth 198-199, 367 (1999).
17. K. Nakagawa, K. Maeda, and S. Takeuchi, Appl. Phys. Lett. 34, 574 (1979).
18. L.O. Bubulac, W.E. Tennant, D.D. Edwall, E.R. Gertner, and J.C. Robinson, J. Vac. Sci. Technol. A 3, 163 (1985).
19. M. Martinka, L.A. Almeida, J.D. Benson, and J.H. Dinan, J. Electron. Mater. 30, 632 (2001).