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Volumn 198-199, Issue PART I, 1999, Pages 367-373
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Analysis of types of residual dislocations in the VGF growth of GaAs with extremely low dislocation density (EPD≪1000cm-2)
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Author keywords
Dislocations; GaAs; Low EPD; Vertical gradient freeze
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Indexed keywords
CRYSTAL GROWTH;
CRYSTAL ORIENTATION;
DISLOCATIONS (CRYSTALS);
MICROSCOPIC EXAMINATION;
SEMICONDUCTOR GROWTH;
SINGLE CRYSTALS;
THERMAL STRESS;
X RAY CRYSTALLOGRAPHY;
INFRARED TRANSMISSION MICROSCOPY;
VERTICAL GRADIENT-FREEZE (VGF) METHOD;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0033514682
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(98)01219-6 Document Type: Article |
Times cited : (11)
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References (21)
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