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Volumn 198-199, Issue PART I, 1999, Pages 367-373

Analysis of types of residual dislocations in the VGF growth of GaAs with extremely low dislocation density (EPD≪1000cm-2)

Author keywords

Dislocations; GaAs; Low EPD; Vertical gradient freeze

Indexed keywords

CRYSTAL GROWTH; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); MICROSCOPIC EXAMINATION; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; THERMAL STRESS; X RAY CRYSTALLOGRAPHY;

EID: 0033514682     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01219-6     Document Type: Article
Times cited : (11)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.