Plasma-cleaned InSb (112)B for large-area epitaxy of HgCdTe sensors

Journal of Electronic Materials

Volumn 37, Issue 9, 2008, Pages 1247-1254

  Jaime Vasquez, M ^a   Martinka, M ^a   Stoltz, A J ^a   Jacobs, R N ^a   Benson, J D ^a   Almeida, L A ^a   Markunas, J K ^a  

^a NIGHT VISION AND ELECTRONIC SENSORS DIRECTORATE   (United States)

Author keywords

CdTe InSb; MBE; Plasma cleaning; RHEED; XPS

Indexed keywords

CDTE/INSB; EPILAYERS GROWN; ETCH PIT DENSITY; HETERO-EPITAXY; MBE; MOLECULAR BEAM EPITAXY (MBE); PLASMA CLEANING; PLASMA TREATMENTS; RHEED; ROCKING CURVE; X-RAY DIFFRACTION; XPS;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; CRYSTAL GROWTH; DEFECT DENSITY; EPILAYERS; EPITAXIAL GROWTH; ETCHING; MAPS; MERCURY COMPOUNDS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PLASMA DEPOSITION; PLASMA ETCHING; PLASMAS; SEMICONDUCTING CADMIUM TELLURIDE; SUBSTRATES;

MOLECULAR BEAM EPITAXY;

EID: 51849160828     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-008-0460-1     Document Type: Article

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