Molecular beam epitaxy growth of HgCdTe on Ge for third-generation infrared detectors

Journal of Electronic Materials

Volumn 35, Issue 6, 2006, Pages 1231-1236

  Zanatta, J P ^a   Badano, G ^a   Ballet, P ^a   Largeron, C ^a   Baylet, J ^a   Gravrand, O ^a   Rothman, J ^a   Castelein, P ^a   Chamonal, J P ^a   Million, A ^a   Destefanis, G ^a   Mibord, S ^b   Brochier, E ^b   Costa, P ^b  

^a CEA GRENOBLE   (France)

^b SOFRADIR   (France)

Author keywords

Focal plane array (FPA); Ge substrates; HgCdTe; Infrared (IR) detectors; Megapixel; Molecular beam epitaxy (MBE)

Indexed keywords

FOCAL PLANE ARRAY (FPA); GE SUBSTRATES; HGCDTE; INFRARED (IR) DETECTORS; MEGAPIXEL;

CADMIUM ALLOYS; GERMANIUM; INFRARED DETECTORS; MOLECULAR BEAM EPITAXY; SUBSTRATES;

MERCURY (METAL);

EID: 33746216386     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0246-2     Document Type: Conference Paper

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