MBE growth and transfer of HgCdTe epitaxial films from InSb substrates

Journal of Electronic Materials

Volumn 39, Issue 7, 2010, Pages 1058-1062

  De Lyon, T J ^a   Rajavel, R D ^a   Nosho, B Z ^a   Terterian, S ^a   Beliciu, M L ^a   Patterson, P R ^a   Chang, D T ^a   Boag O'Brien, M F ^a   Holden, B T ^a   Jacobs, R N ^b   Benson, J D ^b  

^a Hughes Aircraft Co   (United States)

^b US Army Research Development and Engineering Command   (United States)

Author keywords

Detectors; Heteroepitaxy; HgCdTe; InSb; Molecular beam epitaxy (MBE); Photodiodes; Wafer bonding

Indexed keywords

ADHESIVE WAFER BONDING; BONDING ADHESIVE; DEVICE PROCESSING; ETCH PIT DENSITY; HETEROEPITAXIAL GROWTH; HETEROEPITAXY; HGCDTE; HGCDTE FILMS; HIGH QUALITY; INSB; MBE GROWTH; MOLECULAR-BEAM EPITAXY (MBE); POSTGROWTH ANNEALING; ROCKING CURVES; SCANNING ACOUSTIC MICROSCOPY; SI SUBSTRATES; SINGLE-CRYSTAL FILMS; VOID CLUSTERS; VOID DEFECTS; WAFER BOW; X RAY ROCKING CURVE;

BONDING; CADMIUM COMPOUNDS; DEFECT DENSITY; DEFECTS; DETECTORS; EPITAXIAL FILMS; EPITAXIAL GROWTH; INDIUM ANTIMONIDES; MERCURY (METAL); MERCURY COMPOUNDS; MOLECULAR BEAMS; PHOTODIODES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SILICON WAFERS; SUBSTRATES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

WAFER BONDING;

EID: 77954608517     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-009-1041-7     Document Type: Conference Paper

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