LWIR HgCdTe on Si detector performance and analysis

Journal of Electronic Materials

Volumn 35, Issue 6, 2006, Pages 1417-1422

  Carmody, M ^a   Pasko, J G ^a   Edwall, D ^a   Bailey, R ^a   Arias, J ^a   Groenert, M ^b   Almeida, L A ^b   Dinan, J H ^b   Chen, Y ^c   Brill, G ^c   Dhar, N K ^c  

^a ROCKWELL SCIENTIFIC COMPANY   (United States)

^b U S ARMY   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

CdTe buffer layer; Molecular beam epitaxy (MBE); Silicon

Indexed keywords

CDTE BUFFER LAYERS; CURRENT-VOLTAGE (I-V) CHARACTERISTICS; DIODE JUNCTIONS; DISLOCATION DENSITY;

CADMIUM; CHARACTERIZATION; COMPUTER ARCHITECTURE; MERCURY (METAL); MOLECULAR BEAM EPITAXY; SILICON; SUBSTRATES; TELLURIUM; THERMAL EFFECTS; THERMAL EXPANSION;

INTERMETALLICS;

EID: 33746216356     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0277-8     Document Type: Conference Paper

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