Improved morphology and crystalline quality of MBE CdZnTe/Si

Journal of Electronic Materials

Volumn 30, Issue 6, 2001, Pages 608-610

  Almeida, L A ^a   Hirsch, L ^a   Martinka, M ^a   Boyd, P R ^b   Dinan, J H ^a  

^a NIGHT VISION AND ELECTRONIC SENSORS DIRECTORATE   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

CdTe; CdZnTe; Heteroepitaxy; Molecular beam epitaxy (MBE); Si substrates

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

CADMIUM ZINC TELLURIDE; CRYSTALLINE QUALITY; CYCLIC THERMAL ANNEALING; DEFECT-DECORATION ETCHING; HETEROEPITAXY; NOMARSKY MICROSCOPY;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0035360145     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02665842     Document Type: Article

References (5)