Ferrite film growth on semiconductor substrates towards microwave and millimeter wave integrated circuits

Journal of Applied Physics

Volumn 112, Issue 8, 2012, Pages

  Chen, Z ^a,c   Harris, V G ^a,b  

^a NORTHEASTERN UNIVERSITY   (United States)

^b Northeastern University   (United States)

^c INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE DEVICES; ELECTRONIC SYSTEMS; FERRITE FILMS; MILLIMETER-WAVE BAND; MILLIMETER-WAVE INTEGRATED CIRCUITS; ON CHIPS; OPERATING FREQUENCY; PASSIVE DEVICES; PAST AND PRESENT; PRODUCTION COST; SEMICONDUCTOR SUBSTRATE; TECHNICAL BARRIERS;

FERRITE; FERRITES; FILM GROWTH; INTEGRATION; MICROWAVE INTEGRATED CIRCUITS; MILLIMETER WAVES;

SEMICONDUCTOR DEVICES;

EID: 84868362519     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4739219     Document Type: Review

References (101)

1. E. Brookner, Phased arrays and radars-past, present and future., Microwave J. 49, 24 (2006).
2. V. G. Harris, Z. Chen, Y. Chen, S. Yoon, Ba-hexaferrite films for next generation microwave devices., J. Appl. Phys. 99, 08M911 (2006). 10.1063/1.2165145
3. H. A. Kramers, L'interaction entre les atomes magnétogènes dans un cristal paramagnétique., Physica 1, 182 (1934). 10.1016/S0031-8914(34)90023-9
4. L. Néel, Proprietes magnetiques des ferrites; ferromagnetisme et antiferromag netisme., Ann. Phys. 3, 137 (1948).
5. P. W. Anderson, Antiferromagnetism. Theory of superexchange interaction., Phys. Rev. 79, 350 (1950). 10.1103/PhysRev.79.350
6. J. H. van Vleck, Recent developments in the theory of antiferromagnetism., J. Phys. Rad. 12, 1178 (1951). 10.1051/jphysrad: 01951001203026200
7. X. Zuo, A. Yang, S. D. Yoon, Large induced magnetic anisotropy in manganese spinel ferrite films., Appl. Phys. Lett. 87, 152505 (2005). 10.1063/1.2084341
8. A. Yang, C. N. Chinnasamy, J. M. Greneche, Y. Chen, Large tunability of Néel temperature by growth-rate-induced cation inversion in Mn-ferrite nanoparticles., Appl. Phys. Lett. 94, 113109 (2009). 10.1063/1.3099340
9. A. Yang, Z. Chen, X. Zuo, Cation-disorder-enhanced magnetization in pulsed-laser-deposited CuFe204 films., Appl. Phys. Lett. 86, 252510 (2005). 10.1063/1.1952571
10. J. Smit, and H. P. J. Wijn, Ferrites (John Wiley Sons, New York, 1959), Vol. 182.
11. J. J. Went, G. W. Rathenau, E. W. Gorter, Hexagonal iron-oxide compounds as permanent-magnet materials., Phys. Rev. 86, 424 (1952). 10.1103/PhysRev.86. 424.2
12. J. Smit and H. G. Beljers, Ferromagnetic resonance absorption in BaFe12O19, A highly anisotropic crystal., Philips Res. Rep. 10, 113 (1955).
13. J. Smit and H. P. J. Wijn, Ferrites (Wiley, New York, 1959), pp. 191-211.
14. V. G. Harris, A. Geiler, Y. Chen, S. D. Yoon, M. Wu, A. Yang, Z. Chen, P. He, P. V. Parimi, X. Zuo, C. E. Patton, M. Abe, O. Acher, and C. Vittoria, Recent advances in processing and applications of microwave ferrites., J. Magn. Magn. Mater. 321, 2035 (2009). 10.1016/j.jmmm.2009.01.004
15. J. H. Scaff and R. S. Ohl, Development of silicon crystal rectifiers for microwave radar receivers., Bell Syst. Tech. J. 26, 1 (1947). 10.1002/bltj
16. V. A. Johnson, Karl Lark-Horovitz, Pioneer in Solid State Physics (Pergamon, New York, 1969).
17. F. Seitz, Research on silicon and germanium in world war II., Phys. Today 48, 22 (1995). 10.1063/1.881449
18. W. Shockley, U.S. patent 2,502,488 (1950).
19. G. Moore, Cramming more components onto integrated circuits., Electron. Mag. 38, 114 (1965).
20. G. Moore, Progress in digital integrated electronics., IEEE, IEDM Tech Dig. 21, 11 (1975).
21. M. Bohr and J. Gustafson, private communication (2011).
22. G. M. Schmid, M. D. Stewart, C.-Y. Wang, B. D. Vogt, V. M. Prabhu, E. K. Lin, and C. G. Willson, Resolution limitations in chemically amplified photoresist systems., Proc. SPIE 5376, 333 (2004). 10.1117/12.536656
23. Zhores I. Alferov, The double heterostructure: concept and its applications in physics, electronics and technology., Noble lecture, Dec. (2000).
24. H. Kondoh, in IEEE Radio Frequency Integrated Circuits Symposium, Baltimore, MD, 11-14 June 1998.
25. S. E. Thompson, R. S. Chau, T. Ghani, K. Mistry, S. Tyagi, and M. T. Bohr, In search of Forever, continued transistor scaling one new material at a time., IEEE Trans. Semicond. Manuf. 18 (1), 26-36 (2005). 10.1109/TSM.2004. 841816
26. E. O. Johnson, Physical limitations on frequency and power parameters of transistors., RCA Rev. 26, 163-177 (1963).
27. R. W. Keyes, Figure of merit for semiconductors for high-speed switches., Proc. IEEE 60, 225-232 (1972). 10.1109/PROC.1972.8593
28. M. Bhatnagar and B. J. Baliga, Comparison of 6H-SiC, 3C-SiC, and Si for power devices., IEEE Trans. Electron Devices 40, 645-655 (1993). 10.1109/16.199372
29. C. I. Harris, S. Savage, A. Konstantinov, M. Bakowski, and P. Ericsson, Progress towards SiC products., Appl. Surf. Sci. 184, 393-398 (2001). 10.1016/S0169-4332(01)00525-6
30. H. Matsunami, Current SiC technology for power electronic devices beyond Si., Microelectron. Eng. 83, 2-4 (2006). 10.1016/j.mee.2005.10.012
31. See A novel radar for the Eurofighter http://www.airpower.at/news06/0922- captor-e/index.html, Sept. 22, 2006.
32. R. S. Pengely and J. A. Turner, Monolithic broadband GaAs FET amplifiers., Electron. Lett. 12 (10), 251-252 (1976). 10.1049/el:19760193
33. S. A. Oliver, P. M. Zavracky, N. E. McGruer, and R. Schmidt, A monolithic single-crystal yttrium iron garnet/silicon X-band circulator., IEEE Microw. Guid. Wave Lett. 7, 239-241 (1997). 10.1109/75.605490
34. S. A. Oliver, P. Shi, W. Hu, H. How, S. W. McKnight, N. E. McGruer, P. M. Zavracky, and C. Vittoria, Integrated self-biased hexaferrite microstrip circulators for millimeter-wavelength applications., IEEE Trans. Microwave Theory Tech. 49 (2), 385-387 (2001). 10.1109/22.903102
35. P. H. L. Rasky, D. W. Greve, and M. H. Kryder, The feasibility of silicon on garnet technology., J. Appl. Phys. 57 (1), (1985). 10.1063/1.334677
36. H. M. Manasevit, Epitaxial composite and method of making., U.S. patent 4 368 098 (1983).
37. M. Razeghi, P.-L. Meunier, and P. Maurel, Growth of CalnAs-InP multiple quantum wells on garnet (GGC Gd, Ca,012) substrate by metalorganic chemical vapor deposition., J. Appl. Phys. 59, 2261-2263 (1986). 10.1063/1.336374
38. S. Ito, H. Fujioka, and M. Oshima, Characterization of heterointerfaces in GaAs/MnAs/MnZn-ferrite structures., J. Crystal Growth 260, 384-387 (2004). 10.1016/j.jcrysgro.2003.08.070
39. J. Ohta, H. Fujioka, H. Takahashi, and M. Oshima, Phys. Status Solidi A 188, 497 (2001). 10.1002/1521-396X(200112)188:2<497::AID-PSSA497>3.0.CO;2- O
40. J. Ohta, H. Fujioka, S. Ito, and M. Oshima, Appl. Phys. Lett. 81, 2373 (2002). 10.1063/1.1509863
41. T. Ikeda, H. Fujioka, S. Hayakawa, K. Ono, M. Oshima, M. Yoshimoto, H. Maruta, H. Koinuma, K. Inaba, and R. Matsuo, Jpn. J. Appl. Phys. 38, L854 (1999). 10.1143/JJAP.38.L854
42. H. Fujioka, T. Ikeda, S. Ito, and M. Oshima, J. Crystal Growth 241, 309 (2002). 10.1016/S0022-0248(02)01311-8
43. J. L. Snoek, Physica, 3, 463 (1936). 10.1016/S0031-8914(36)80011-1
44. J. L. Snoek, Philips Tech. Rev. 8, 353 (1946).
45. D. M. Heinz, P. 1. Besser, I. M. Owens, J. E. Mee, and G. R. Pulliam, Mobile cylindrical magnetic domains in epitaxial garnet films., Appl. Phys. 42, 1243-1251 (1971). 10.1063/1.1660200
46. J. E. Mee, P. J. Besser, and F. A. Pizzarello, Epitaxial growth of ferromagnetic garnets, Air Force Avionics Laboratory, Techincal Report No. AFAL-TR-70-194, 1970.
47. X. Sui, M. Scherge, M. H. Kryder, J. E. Snyder, V. G. Harris, and N. C. Koon, Barium hexaferrite thin film recording media., J. Magn. Magn. Mater. 155, 132 (1996). 10.1016/0304-8853(95)00722-9
48. T. L. Hylton, M. A. Parker, M. Ullah, K. R. Coffey, R. Umphress, and J. K. Howard, Ba-ferrite thin-film media for high-density longitudinal recording., J. Appl. Phys. 75, 5960-5965 (1994). 10.1063/1.356987
49. A. Morisako, T. Naka, K. Ito, A.Takizawa, M. Matsumoto, and Y. Hong., J. Magn. Magn. Mater. 304, 242-245 (2002). 10.1016/j.jmmm
50. A. Morisakoa, N.N. Shams, Y. Miuraa, M. Matsumoto, S. H. Gee, M. H. Park, and Y. K. Hong, J. Magn. Magn. Mater. 272-276, 2191-2193 (2004). 10.1016/j.jmmm.2003.12.632
51. M. Matsuoka, M. Naoe, and Y. Hoshi, Ba-ferrite thin-film disk for perpendicular magnetic recording., J. Appl. Phys. 57 (1), 4040-4042 (1985). 10.1063/1.334664
52. A. Morisako, X. Liu, M. Matsumoto, and M. Naoe, The effect of underlayer for Ba-ferrite sputtered films on c-axis orientation., J. Appl. Phys. 81 (8), 4374-4377 (1997). 10.1063/1.364828
53. A. Lisfi and J. C. Lodder, J. Phys.: Condens. Matter 13, 5917 (2001). 10.1088/0953-8984/13/26/306
54. E. Lacroix, P. Gerard, G. Marest, and M. Dupuy, Substrate effects on the crystalline orientation of barium hexaferrite films., J. Appl. Phys. 69 (a), 4770-4772 (1991). 10.1063/1.348274
55. I. Wane, A. Bessaudou, F. Cosset, A. Célérier, C. Girault, J. L. Decossas, and J. C. Vareille, J. Magn. Magn. Mater. 211, 309-313 (2000). 10.1016/S0304-8853(99)00752-0
56. M. Le Berre, S. Capraro, J. P. Chatelon, H. Joisten, T. Rouiller, B. Bayard, D. Barbier, and J. J. Rousseau, Barium ferrite thick films for microwave applications., J. Magn. Magn. Mater. 272-276, E1805-E1806 (2004). 10.1016/j.jmmm.2003.12.871
57. X. Liu, M. H. Hong, W. D. Song, G. X. Chen, H. M. J. Lam, J. P. Wang, and T. C. Chong, Appl. Phys. A 80, 611-614 (2005). 10.1007/s00339-003-2245-y
58. L. Zhang, X. D. Su, Y. Chen, Q. F. Li, and V. G. Harris, Scr. Mater. 63, 492-495 (2010). 10.1016/j.scriptamat.2010.05.013
59. Y. Nie, ZI. Harward, K. Balin, A. Beaubien, and Z. Celinski, J. Appl. Phys. 107, 073903 (2010). 10.1063/1.3343567
60. Y. Chen, I. Smith, A. L. Geiler, C. Vittoria, V. Zagorodnii, Z. Celinski, and V. G. Harris, J. Phys. D: Appl. Phys. 41, 095006 (2008). 10.1088/0022-3727/41/9/095006
61. J. D. Adam, H. Buhay, M. R. Daniel, M. C. Driver, G. W. Eldridge, M. H. Hanes, and R. L. Messham, IEEE International Microwave Symposium Digest, catalog number 95CH35774, pp. 97, (1995).
62. X. W. Xi, Y. J. Chen, and X. Y. Zhang, Vacuum 75, 161-167 (2004). 10.1016/j.vacuum.2004.02.001
63. M. Sorescu, L. Diamandescu, R. Swaminathan, M. E. McHenry, and M. Feder, J. Appl. Phys. 97, 10G105 (2005). 10.1063/1.1854416
64. C. Calle, V. H. Calle, F. Cuéllar, A. Cortés, D. Arias, W. Lopera, P. Prieto, O. Guzmán, and G. A. Mendoza, Physica B, 384, 103-105 (2006). 10.1016/j.physb.2006.05.163
65. M. Abe, T. Itoh, Y. Tamaura, Y. Gotoh, and M. Gomi, IEEE Trans. Magn. MAG- 23 (5), (1987).
66. K. C. Yoo and S. H. Talisa, Electro-optical materials for switches, coatings, sensor optics, and detectors., SPIE 1307, (1990).
67. H. Buhay, J. D. Adam, M. R. Daniel, N.J. Doyle, M. C. Driver, G. W. Eldridge, M. H. Hanes, R. L. Messham, and M. M. Sopira, IEEE Trans. Magn. 31, 3832 (1995). 10.1109/20.489787
68. J. D. Adam, H. Buhay, M. R. Daniel, G. W. Eldridge, M. H. Hanes, R. L. Messham, and T. J. Smith, IEEE MTT-S Digest, (1996).
69. R. Madar, Nature (London), 430, 974 (2004). 10.1038/430974a
70. P. G. Neudeck, SiC technology., in The VLSI Handbook, The Electrical Engineering Handbook Series, edited by, W.-K. Chen, (CRC Press and IEEE Press, Boca Raton, Florida, 2000), pp. 6.1-6.24.
71. Workshop Notes, Is GaN ready for system insertion., in International Microwave Symposium, Boston, MA, 2009.
72. D. Spry, P. Neudeck, R. Okojie, L. Y. Chen, G. Beheim, R. Meredith, W. Mueller, and T. Ferrier, Electrical Operation of 6H-SiC MESFET at 500 C for 500 Hours in Air Ambient., 2004 IMAPS International High Temperature Electronics Conference, Santa Fe, NM, May 18-20, 2004.
73. A. R. Powell and Larry B. Rowland, SiC materials-progress, status, and potential roadblocks., Proc. IEEE, 90, 942 (2002). 10.1109/JPROC.2002.1021560
74. M. Treu, R. Rupp, P. Blaschitz, and J. Hilsenbeck, Superlattices Microstruct. 40, 380 (2006). 10.1016/j.spmi.2006.09.005
75. Z. Chen, A. Yang, Z. Cai, K. Ziemer, C. Vittoria, and V. G. Harris, Structure and magnetism of Ba-hexaferrite films grown on single crystal 6-H SiC., IEEE Trans. Magn. 42, 2855 (2006) 10.1109/TMAG.2006.879883
76. P. O. Ohodnicki, K. Y. Goh, Y. Hanlumyuang, K. Ramos, M. E. McHenry, Z. Cai, K. Ziemer, H. Morkoc, N. Biyikli, Z. Chen, C. Vittoria, and V. G. Harris, Magnetic anisotropy and crystalline texture in BaO(Fe2O3)6 thin films deposited on GaN/Al2O3., J. Appl. Phys. 101, 09M521 (2007). 10.1063/1.2712295
77. 3 substrates., Appl. Phys. Lett. 96, 242502 (2010). 10.1063/1.3446867
78. Z. Cai, Z. Chen, T. L. Goodrich, V. G. Harris, and K. S. Ziemer, Chemical and structural characterization of barium hexaferrite films deposited on 6H-SiC with and without MgO/BaM interwoven layers., J. Cryst. Growth 307 (2), 321 (2007); 10.1016/j.jcrysgro.2007.06.031
79. Z. Chen, A. Yang, S. D. Yoon, K. Ziemer, C. Vittoria, and V. G. Harris, Epitaxial growth of Ba-hexaferrite films on single crystal 6-H SiC., J. Magn. Magn. Mater. 301, 166 (2006). 10.1016/j.jmmm.2005.06.030
80. Z. Chen, Z. Cai, A. Yang, K. S. Ziemer, C. Vittoria, and V. G. Harris, J. Appl. Phys. 103, 07E513 (2008). 10.1063/1.2839327
81. Z. Chen, A. Yang, A. Geiler, V. G. Harris, C. Vittoria, P. R. Ohodnicki, K. Y. Goh, M. E. McHenry, Z. Cai, T. L. Goodrich, and K. Ziemer, Epitaxial growth of M-type Ba-hexaferrite films on MgO (111)/SiC (0001) with low ferromagnetic resonance linewidths., Appl. Phys. Lett. 91, 182505 (2007). 10.1063/1.2794011
82. Z. Cai, T. L. Goodrich, Z. Chen, V. G. Harris, and K. S. Ziemer, Epitaxial growth of barium hexaferrite film on wide bandgap semiconductor 6H-SiC by molecular beam epitaxy., J. Phys. D: Appl. Phys. 43, 095002 (2009). 10.1088/0022-3727/43/9/095002
83. T. L. Goodrich, Z. Cai, M. D. Losego, J.-P. Maria, and K. S. Ziemer, Thin, crystalline MgO on hexagonal 6H-SiC(0001) by molecular beam epitaxy for functional oxide integration., J. Vac. Sci. Technol. B 25, 1033 (2007). 10.1116/1.2734979
84. S. D. Yoon and C. Vittoria, Thick M-type hexaferrite films growth on garnet substrates., J. Appl. Phys. 96 (4), 2131 (2004). 10.1063/1.1769597
85. Y. Akaiwa and T. Okazaki, IEEE Trans., Magn. 10, 374 (1974). 10.1109/TMAG.1974.1058336
86. N. Zeina, H. How, and C. Vittoria, IEEE Trans. Magn. 28, 3219 (1992). 10.1109/20.179764
87. S. A. Oliver, P. Shi, W. Hu, IEEE Trans. Microwave Theory Tech. 49, 385 (2001). 10.1109/22.903102
88. Y. Chen, T. Sakai, T. Chen, S. D. Yoon, A. L. Geiler, C. Vittoria, and V. G. Harris, Appl. Phys. Lett. 88, 062516 (2006). 10.1063/1.2173240
89. 6 gas mixtures., Appl. Phys. Lett. 94, 112505 (2009). 10.1063/1.3099884
90. T. M. Perekalina and V. P. Cheparin, Fiz. Tverd. Tela (Leningrad) 9, 217 (1967).
91. T. M. Perekalina, M. A. Vinnik, R. I. Zevereva, Zh. Eksp. Teor. Fiz. 59, 1490 (1970).
92. G. Albanese and A. Deriu, Ceramargia Int. 5, 3 (1979). 10.1016/0390-5519(79)90002-4
93. L. G. Van Uitert and F. W. Swanekamp, J. Appl. Phys. 28, 482 (1957). 10.1063/1.1722776
94. A. H. Banks and E. Banks, J. Phys. Chem. Solids 4, 217 (1958). 10.1016/0022-3697(58)90119-7
95. K. Haneda and H. Kojima, Jpn. J. Appl. Phys. 12, 355 (1973). 10.1143/JJAP.12.355
96. A. L. Geiler, S. D. Yoon, C. N. Chinnasamy, Z. Chen, M. Geiler, V. G. Harris, and C. Vittoria, Appl. Phys. Lett. 91, 162510 (2007). 10.1063/1.2800890
97. R. Sloan C. K. Yong, and L. E. Davis, in IEE Colloquium on Terahertz Technology (1995), Vol. 13, pp. 1-6.
98. R. Pyndiah and F. Van Den BoGaart, Novel multioctave MMIC active isolator (1-20 GHz)., Electronics Lett. 25, 1420-1422 (1989). 10.1049/el:19890948
99. S. Hara, T. Tokumitsu, and M. Azkawa, IEEE Trans. Microwave Theory Tech. 38, 1399-1406 (1990). 10.1109/22.58677
100. D. Kother, B. Hopf, Th. Sporkmann, I. Wolff, and St. Koslowski, New types of MMIC circulators., in IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium, Orlando, FL, 1995.
101. V. G. Harris, IEEE Trans. Magn., Adv Magn. 48 (3), 1075-1104 (2012).