Commercial SiC device processing: Status and requirements with respect to SiC based power devices

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 380-387

  Treu, M ^a   Rupp, R ^b   Blaschitz, P ^a   Hilsenbeck, J ^a  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Ohmic contact; Power device; Production; Schottky diode; Silicon carbide; Wafering

Indexed keywords

CRYSTAL DEFECTS; OHMIC CONTACTS; POWER ELECTRONICS; SCHOTTKY BARRIER DIODES; SILICON WAFERS;

COMMERCIALIZATION; EPITAXIAL LAYERS; POWER DEVICES; WAFERING;

SILICON CARBIDE;

EID: 33845203011     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.09.005     Document Type: Article

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