High-rate reactive ion etching of barium hexaferrite films using optimal CHF3 / SF6 gas mixtures

Applied Physics Letters

Volumn 94, Issue 11, 2009, Pages

  Chen, Zhaohui ^a   Yang, Aria ^a   Xie, Changqing ^b   Yang, Qinghua ^b   Vittoria, C ^a   Harris, V G ^a  

^a Northeastern University   (United States)

^b INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM; FERRITE; GAS MIXTURES; SILICON CARBIDE; SULFUR; SULFUR HEXAFLUORIDE; TABLE LOOKUP;

BARIUM HEXAFERRITE; HIGH RATES; QUASI SINGLE CRYSTALS; REACTIVE IONS; VERTICAL WALLS;

REACTIVE ION ETCHING;

EID: 63049123764     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3099884     Document Type: Article

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