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Volumn 137, Issue 1, 2012, Pages 252-257

Chemical fabrication of p-type Cu 2O transparent thin film using molecular precursor method

Author keywords

Chemical synthesis; Electrical characterization; Heat treatment; Semiconductors; Thin films

Indexed keywords

ACCEPTOR LEVELS; AVERAGE GRAIN SIZE; CHEMICAL FABRICATION; CHEMICAL SYNTHESIS; CRITICAL LOAD; CUBIC LATTICE; ELECTRICAL CHARACTERIZATION; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; GLASS SUBSTRATES; HALL EFFECT MEASUREMENT; MOLECULAR PRECURSOR; MOLECULAR PRECURSOR METHOD; OPTICAL BANDS; P TYPE SEMICONDUCTOR; P-TYPE; PRECURSOR FILMS; PRECURSOR SOLUTIONS; SCRATCH TEST; TETRAACETIC ACID; THERMAL REACTIONS; TRANSPARENT THIN FILM; WET PROCESS;

EID: 84868213406     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2012.09.016     Document Type: Article
Times cited : (41)

References (29)
  • 12
    • 84868210084 scopus 로고    scopus 로고
    • Joint Committee of Powder Diffraction, JCPDS Card No. 5-667
    • Joint Committee of Powder Diffraction, JCPDS Card No. 5-667.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.