Oxide trapping in the InGaAs-Al 2O 3 system and the role of sulfur in reducing the Al 2O 3 trap density

IEEE Electron Device Letters

Volumn 33, Issue 11, 2012, Pages 1544-1546

  Alian, Alireza ^a,b   Brammertz, Guy ^a   Degraeve, Robin ^a   Cho, Moonju ^a   Merckling, Clement ^a   Lin, Dennis ^a   Wang, Wei E ^c   Caymax, Matty ^a   Meuris, Marc ^a   De Meyer, Kristin ^a,b   Heyns, Marc ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c INTEL CORPORATION   (United States)

Author keywords

(NH 4) 2S; Al 2O 3; border trap; InGaAs; trap spectroscopy by charge injection and sensing (TSCIS)

Indexed keywords

(NH 4) 2S; ATOMIC LAYER DEPOSITED; BORDER TRAPS; COULOMB SCATTERING; DRIVE CURRENTS; INDIUM CONCENTRATION; INGAAS; NEW MECHANISMS; OXIDE TRAP DENSITY; OXIDE TRAPS; TIME-OF-FLIGHT SECONDARY ION MASS SPECTROSCOPY; TRANSISTOR PERFORMANCE; TRAP DENSITY; TRAP SPECTROSCOPY;

EID: 84867901429     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2212692     Document Type: Article

References (13)

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