Graphene layer growth on silicon substrates with nickel film by pulse arc plasma deposition

Applied Physics Letters

Volumn 101, Issue 16, 2012, Pages

  Fujita, K ^a   Banno, K ^a   Aryal, H R ^a   Egawa, T ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARC PLASMA; ARC PLASMA DEPOSITION; CARBON LAYERS; EX-SITU ANNEALING; GRAPHENE LAYERS; HIGH TEMPERATURE; HIGH VACUUM PRESSURE; LAYER THICKNESS; NI FILMS; NICKEL FILM; OPTIMUM TEMPERATURE; ROOM TEMPERATURE; SILICON SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY OBSERVATION;

RAMAN SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

GRAPHENE;

EID: 84867814079     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4761474     Document Type: Article

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