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Volumn 51, Issue 1 PART 2, 2012, Pages

Epitaxial graphene on si(111) substrate grown by annealing 3c-sic/carbonized silicon

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION ANALYSIS; DEVICE APPLICATION; EPITAXIAL GRAPHENE; HIGH QUALITY; RAMAN MAPPING; SI(111) SUBSTRATE; SILICON SUBSTRATES; SINGLE LAYER;

EID: 84857211834     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.01AH05     Document Type: Conference Paper
Times cited : (9)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.