P-205L: Late-news poster: Comparison between a-InGaZnO and a-InHfZnO TFTs in perspective of subgap Density of States (DOS) in active film

Digest of Technical Papers - SID International Symposium

Volumn 41 1, Issue , 2010, Pages 1389-1392

  Lee, Sangwon ^a   Kim, Sungchul ^a   Jeon, Yong Woo ^a   Kim, Dong Myong ^a   Kim, Dae Hwan ^a   Lee, Je Hun ^b   Ahn, Byung Du ^b   Park, Sei Yong ^b   Park, Jun Hyun ^b   Kim, Joo Han ^b   Park, Jaewoo ^b  

^a Kookmin University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM COMPOUNDS; INDIUM COMPOUNDS;

ACTIVE FILMS; DC PERFORMANCE; INGAZNO; MULTI FREQUENCY; NEGATIVE BIAS; SUBGAP DENSITY OF STATE (DOS);

ZINC COMPOUNDS;

EID: 84863306637     PISSN: 0097966X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1889/1.3499961     Document Type: Conference Paper

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