Local rear contacts to silicon solar cells by in-line high-rate evaporation of aluminum

Solar Energy Materials and Solar Cells

Volumn 107, Issue , 2012, Pages 272-282

  Mader, Christoph ^a   Müller, Jens ^a   Eidelloth, Stefan ^a   Brendel, Rolf ^a,b  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

Contact recombination; Contact resistivity; In line evaporation; Loss analysis; Rear contact; Silicon solar cell

Indexed keywords

ALUMINUM OXIDES; CONTACT PROPERTIES; CONTACT RESISTIVITIES; HIGH RATE; IN-LINE; LOSS ANALYSIS; P-TYPE SILICON; P-TYPE WAFER; REAR SIDE; SATURATION CURRENT DENSITIES; SCREEN-PRINTED; SURFACE DOPING;

ALUMINUM; CELLS; CONVERSION EFFICIENCY; CYTOLOGY; ENERGY DISSIPATION; EVAPORATION; PASSIVATION; SILICON NITRIDE; SILICON SOLAR CELLS; SILICON WAFERS;

PHASE TRANSITIONS;

EID: 84867581113     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2012.06.047     Document Type: Article

References (52)

1. A. Blakers, A. Wang, and A. Milne 22.8% efficient silicon solar cell Applied Physics Letters 55 1989 1363 1365
2. M. Kerr, J. Schmidt, and A. Cuevas Comparison of the open circuit voltage of simplified PERC cells passivated with PECVD silicon nitride and thermal silicon oxide Progress in Photovoltaics: Research and Applications 8 2000 529 536
3. 3 Progress in Photovoltaics: Research and Applications 16 2008 461 466
4. S. Gatz, H. Hannebauer, R. Hesse, F. Werner, A. Schmidt, T. Dullweber, J. Schmidt, K. Bothe, and R. Brendel 19.4%-efficient large-area fully screen-printed silicon solar cells Physica Status Solidi (RRL) 5 2011 147 149
5. V. Meemongkolkiat, K. Nakayashiki, D. Kim, S. Kim, A. Shaikh, A. Kuebelbeck, W. Stockum, A. Rohatgi, Investigation of modified screen-printing Al pastes for local back surface field formation, in: Proceedings of the 4th World Conference on Photovoltaic Energy Conversion, 7-12 May 2006, Waikoloa, HI, USA, pp. 1338-1341.
6. A. Mohr, P. Engelhart, C. Klenke, S. Wanka, A. Stekolnikov, M.Scherff, R. Seguin, S. Tardon, T. Rudolph, M. Hofmann, F. Stenzel, J. Lee, S. Diez, J. Wendt, W. Brendle, S. Schmidt, J. Müller, P. Wawer, M. Hofmann, P. Saint-Cast, J. Nekarda, D. Erath, J. Rentsch, R. Preu, 20% efficient rear side passivated solar cells in pilot series designed for conventional module assembly, in: Proceedings of the 26st European Photovoltaic Solar Energy Conference, 5-9 September 2011, Hamburg, Germany, pp. 2150-2153.
7. J. Nekarda, D. Reinwand, A. Grohe, P. Hartmann, R.Preu, R. Trassl, S. Wieder, Industrial PVD metallization for high efficiency crystalline silicon solar cells, in: Proceedings of the 34th IEEE Photovoltaic Specialists Conference, 7-12 June 2009, Philadelphia, PA, USA, pp. 892-896.
8. F.Heinemeyer, C. Mader, D. Münster, T. Dullweber, N.-P. Harder, R. Brendel, Inline high-rate thermal evaporation of aluminum as a novel industrial solar cell metallization scheme, in: Proceedings of the 2nd Workshop on Metallization, 14-15 April 2010, Constance, BW, Germany, pp. 48-51.
9. C. Mader, J. Müller, S. Gatz, T. Dullweber, R. Brendel, Rear side point-contacts by in-line thermal evaporation of aluminum, in: Proceedings of the 35th IEEE Photovoltaic Specialists Conference, 20-25 June 2010, Honolulu, HI, USA, pp. 1446-1449.
10. D. Kane, R. Swanson, Measurement of the emitter saturation current by a contactless photoconductivity decay method, in: Proceedings of the 18th IEEE Photovoltaic Specialists Conference, 21-25 October 1985, Las Vegas, NV, USA, pp. 578-583.
11. M. Kerr, and A. Cuevas General parameterization of Auger recombination in crystal Silicon Journal of Applied Physics 91 2002 2473 2480
12. B. Fischer, Loss Analysis of Crystalline Silicon Cells Using Photoconductance and Quantum Efficiency Measurements, Ph.D. Thesis, University of Konstanz, 2003, pp. 18-28.
13. R. Cox, and H. Strack Ohmic contacts for GaAs devices Solid-State Electronics 10 1967 1215 1218
14. M. Green Intrinsic concentration, eff. densities of states, and eff. mass in silicon Journal of Applied Physics 67 1990 2944 2954
15. H. Berger Contact resistance and contact resistivity Journal of the Electrochemical Society 119 1972 507 514
16. H. Murrmann, and D. Widmann Messung des Übergangswiderstandes zwischen Metall und Diffusionsschicht in Si-Planarelementen Solid-State Electronics 12 1969 879 886
17. D. Schroder, and D. Meier Solar cell contact resistance - a review EEE Transactions on Electron Devices 31 1984 637 647
18. S. Eidelloth, F. Haase, R. Brendel, Simulation tool for equivalent circuit modeling of photovoltaic devices, IEEE Journal of Photovoltaics PP (99) (2012) 1-8, http://dx.doi.org/10.1109/JPHOTOV.2012.2187774.
19. S. Eideloth, C. Mader, R. Brendel, in preparation.
20. T. Lauinger, J. Schmidt, A. Aberle, and R. Hezel Record low surface recombination velocities on 1 Ω cm p-silicon using remote plasma silicon nitride passivation Applied Physics Letters 68 1996 1232 1234
21. 2 for locally contacted Si solar cells with ultra-short pulses Progress in Photovoltaics: Research and Applications 15 2007 521 527
22. C. Mader, U. Eitner, M. Kessler, and R. Brendel Temperature of silicon wafers during in-line high-rate evaporation of aluminum Solar Energy Materials and Solar Cells 95 2011 3047 3053
23. K. Ramspeck, S. Reissenweber, J. Schmidt, K. Bothe, and R. Brendel Dynamic carrier lifetime imaging of silicon wafers using an infrared-camera- based approach Applied Physics Letters 93 2008 102104-1 102104-3
24. J. Müller, K. Bothe, S. Gatz, F. Haase, C. Mader, and R. Brendel Recombination at laser-processed local base contacts by dynamic infrared lifetime mapping Journal of Applied Physics 108 2010 124513-1 124513-6
25. M. Kessler, T. Ohrdes, B. Wolpensinger, and N. Harder Charge carrier lifetime degradation in Cz silicon through the formation of a boron-rich layer during BBr3 diffusion processes Semiconductor Science and Technology 25 2010 055001-1 055001-9 10.1088/0268-1242/25/5/055001
26. M. Kessler, D. Münster, T. Neubert, C. Mader, J. Schmidt, R. Brendel, High-efficiency back-junction silicon solar cell with an in-line evaporated aluminum front grid, in: Proceedings of the 37th IEEE Photovoltaic Specialists Conference, 19-24 June 2011, Seattle, WA, USA, pp. 1085-1090.
27. C. Mader, R. Bock, J. Schmidt, and R. Brendel Formation of highly aluminum-doped p-type silicon regions by in-line high-rate evaporation Solar Energy Materials and Solar Cells 95 2011 1720 1722
28. C. Mader, R. Bock, J. Müller, J. Schmidt, and R. Brendel Formation of locally aluminum-doped p-type silicon regions by in-line high-rate evaporation Energy Procedia 8 2011 521 526
29. M. Schöfthaler, and R. Brendel Sensitivity and transient response of microwave reflection measurements Journal of Applied Physics 77 1995 3162 3173
30. M. Schöfthaler, U. Rau, and J. Werner Direct observation of a scaling effect on effective minority carrier lifetimes Journal of Applied Physics 76 1994 4168 4172
31. M. Kerr, J. Schmidt, A. Cuevas, and J. Bultman Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide Journal of Applied Physics 89 2001 3821 3826
32. A. Cuevas, P. Basore, G. Giroult-Matlakowski, and C. Dubois Surface recombination velocity of highly doped n-type silicon Journal of Applied Physics 80 1996 3370 3375
33. W. Schottky Zur Halbleitertheorie der Sperrschicht-und Spitzengleichrichter Zeitschrift für Physik 113 1939 367 414
34. A. Yu Electron tunneling and contact resistance of metal-silicon contact barriers Solid-State Electronics 13 1970 239 247
35. G. Carver, J. Kopanski, D. Novotny, and R. Forman Specific contact resistivity of metal-semiconductor contacts-a new, accurate method linked to spreading resistance EEE Transactions on Electron Devices 35 1988 489 497
36. S. Gatz, T: Dullweber, R. Brendel, Contact resistance of local rear side contacts of screen-printed silicon PERC solar cells with efficiencies up to 19.4%, in: Proceedings of the 37th IEEE Photovoltaic Specialists Conference, 19-24 June 2011, Seattle, WA, USA, pp. 3658-3664.
37. P. Basore, D. Rover, A. Smith, PC-1D: Enhanced numerical solar cell modeling, in: Proceedings of the 20th IEEE Photovoltaic Specialists Conference, 26-30 September 1988, Las Vegas, NV, USA, pp. 389-396.
38. A. Wolf, D. Biro, J. Nekarda, S. Stumpp, A. Kimmerle, A. Mack, and R. Preu Comprehensive analytical model for locally contacted rear surface passivated solar cells Journal of Applied Physics 108 2010 124510-1 124510-13
39. H. Fischer, W. Pschunder, Investigation of photon and thermal induced changes in silicon solar cells, in: Proceedings of the 10th IEEE Photovoltaic Specialists Conference, 13-15 November 1973, Palo Alto, CA, USA, pp. 404-411.
40. K. Bothe, R. Sinton, and J. Schmidt Fundamental boron-oxygen related carrier lifetime limit in mono- and multicrystalline silicon Progress in Photovoltaics: Research and Applications 13 2005 287 296
41. A. Herguth, G. Schubert, M. Kaes, and G. Hahn, Avoiding boron-oxygen related degradation in highly boron-doped Cz silicon, in: Proceedings of the 21st European Photovoltaic Solar Energy Conference, 4-8 September 2006, Dresden, Germany, pp. 530-537.
42. B. Lim, K. Bothe, and J. Schmidt Deactivation of the boron-oxygen recombination center in silicon by illumination at elevated temperature Physica Status Solidi (RRL) 2 3 2008 93 95
43. K. Bothe, Oxygen-Related Trapping and Recombination Centres in Boron-doped Crystalline Silicon, Ph.D. Thesis, University of Hannover, 2006, pp. 130-134.
44. B. Lim, Boron-oxygen-related recombination centers in crystalline silicon and the effects of dopant-compensation, Ph.D. Thesis, University of Hannover, 2012, pp. 73-74.
45. H. Berger Models for contacts to planar devices Solid-State Electronics 15 1972 145 158
46. S. Glunz, E. Schneiderlöchner, D. Kray, A. Grohe, M. Hermle, H. Kampwerth, R. Preu, G. Willeke, Laser-fired contact silicon solar cells on p- and n-substrates, in: Proceedings of the 19th European Photovoltaic Solar Energy Conference, 7-11 June 2004, Paris, France, pp. 408-411.
47. K. McIntosh, P. Altermatt, A freeware 1D emitter model for silicon solar cells, in: Proceedings of the 35th IEEE Photovoltaic Specialists Conference, 20-25 June 2010, Honolulu, HI, USA, pp. 2188-2193.
48. S. Yang, and J. Pla Optimization of the back contact in c-Si solar cells Solid-State Electronics 53 2009 925 930
49. J. Zhao, A. Wang, and M. Green 24% efficient PERL structure silicon solar cells Proceedings of IEEE 1990
50. J. Zhao, A. Wang, and M. Green Series resistance caused by the localized rear contact in high efficiency silicon solar cells Solar Energy Materials and Solar Cells 32 1994 89 94
51. R. Brendel, S. Dreissigacker, N. Harder, and P. Altermatt Theory of analyzing free energy losses in solar cells Applied Physics Letters 93 2008 173503-1 173503-3
52. F. Haase, S. Eidelloth, R. Horbelt, K. Bothe, E. Garralaga Rojas, and R. Brendel Loss analysis of back-contact back-junction thin-film monocrystalline silicon solar cells Journal of Applied Physics 110 2011 124510-1 124510-9