Temperature of silicon wafers during in-line high-rate evaporation of aluminum

Solar Energy Materials and Solar Cells

Volumn 95, Issue 11, 2011, Pages 3047-3053

  Mader, Christoph ^a   Kessler, Michael ^a   Eitner, Ulrich ^a   Brendel, Rolf ^a,b  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

In line evaporation; Modeling; Process optimization; Silicon solar cell; Temperature

Indexed keywords

DEPOSITION PROCESS; FINITE ELEMENT SIMULATIONS; HIGH RATE; IN-LINE; IN-LINE EVAPORATION; LAYER THICKNESS; P-TYPE SILICON WAFERS; PEAK TEMPERATURES; SUBSTRATE TEMPERATURE; WAFER EMISSIVITY; WAFER TEMPERATURE; WAFER THICKNESS;

ALUMINUM; ALUMINUM COATINGS; EVAPORATION; OPTIMIZATION; PHASE TRANSITIONS; SEMICONDUCTING SILICON COMPOUNDS; SILICON SOLAR CELLS;

SILICON WAFERS;

EID: 80051545183     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2011.06.031     Document Type: Article

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