Influence of the compensation level on the performance of p-type crystalline silicon solar cells: Theoretical calculations and experimental study

Solar Energy Materials and Solar Cells

Volumn 107, Issue , 2012, Pages 263-271

  Xiao, Chengquan ^a   Yang, Deren ^a   Yu, Xuegong ^a   Gu, Xin ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Carrier lifetime; Carrier mobility; Cell efficiency; Compensation level; Crystalline silicon solar cell; Incomplete ionization

Indexed keywords

CELL EFFICIENCY; COMPENSATION LEVEL; COMPETITION EFFECTS; CRYSTALLINE SILICON SOLAR CELLS; DOPING CONCENTRATION; ELECTRON-HOLE SCATTERINGS; EXCESS CARRIER CONCENTRATION; EXPERIMENTAL STUDIES; HIGH CONCENTRATION; HIGHER EFFICIENCY; INCOMPLETE IONIZATION; IONIZED IMPURITIES SCATTERING; MINORITY CARRIER DIFFUSION LENGTH; P-TYPE; SILICON FEEDSTOCKS; SOLAR CELL EFFICIENCIES; THEORETICAL CALCULATIONS;

CARRIER LIFETIME; CARRIER MOBILITY; CRYSTALLINE MATERIALS; DOPING (ADDITIVES); EFFICIENCY; ELECTRON MOBILITY; ELECTRON SCATTERING; IONIZATION; ISOMERS; OPEN CIRCUIT VOLTAGE;

SILICON SOLAR CELLS;

EID: 84867578711     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2012.06.046     Document Type: Article

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