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Volumn 50, Issue 9-11, 2010, Pages 1725-1730

Analysis of large area Trench-IGBT current distribution under UIS test with the aid of lock-in thermography

Author keywords

[No Author keywords available]

Indexed keywords

COLLECTOR VOLTAGE; CURRENT CONDUCTION; CURRENT DISTRIBUTION; CURRENT FILAMENTATION; EXPERIMENTAL MEASUREMENTS; LOCKIN THERMOGRAPHY; PEAK CURRENTS; POWER DEVICES; UNCLAMPED INDUCTIVE SWITCHING;

EID: 84755161831     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.07.072     Document Type: Conference Paper
Times cited : (25)

References (14)
  • 2
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    • Boundary of power MOSFET unclamped inductive switching (UIS), avalanche-current capability
    • March 1989
    • Rodney Stoltenburg R. Boundary of power MOSFET unclamped inductive switching (UIS), avalanche-current capability. In: IEEE applied power electronics conference proceedings; March 1989. p. 359-64.
    • IEEE Applied Power Electronics Conference Proceedings , pp. 359-364
    • Rodney Stoltenburg, R.1
  • 3
    • 0030173747 scopus 로고    scopus 로고
    • Dynamics of power MOSFET switching under unclamped inductive loading conditions
    • K. Fischer, and K. Shenai Dynamics of power MOSFET switching under unclamped inductive loading conditions IEEE Trans Electr Dev 43 6 1996 1007 1015
    • (1996) IEEE Trans Electr Dev , vol.43 , Issue.6 , pp. 1007-1015
    • Fischer, K.1    Shenai, K.2
  • 4
    • 0036890507 scopus 로고    scopus 로고
    • Unclamped inductive switching behaviour of high power SOI vertical DMOS transistors with lateral drain contacts
    • DOI 10.1016/S0038-1101(02)00227-7, PII S0038110102002277
    • U. Heinle, S. Bengtsson, J. Olsson, K. Pinardi, and J.P. Colinge Unclamped inductive switching behaviour of high power SOI vertical DMOS transistors with lateral drain contacts Solid-State Electron 46 2002 2105 2110 (Pubitemid 35350024)
    • (2002) Solid-State Electronics , vol.46 , Issue.12 , pp. 2105-2110
    • Pinardi, K.1    Heinle, U.2    Bengtsson, S.3    Olsson, J.4    Colinge, J.-P.5
  • 5
    • 4544231108 scopus 로고    scopus 로고
    • Experimental characterization of temperature distribution on power MOS devices during unclamped inductive switching
    • E. D'Arcangelo, A. Irace, G. Breglio, and P. Spirito Experimental characterization of temperature distribution on power MOS devices during unclamped inductive switching Microelectron-Reliab 44 9-11 2004 1455 1459 [September-November]
    • (2004) Microelectron-Reliab , vol.44 , Issue.911 , pp. 1455-1459
    • D'Arcangelo, E.1    Irace, A.2    Breglio, G.3    Spirito, P.4
  • 8
    • 0025512595 scopus 로고
    • Rigorous thermodynamic treatment of heat generation in semiconductor device modeling
    • G.K. Wachutka Rigorous thermodynamic treatment of heat generation in semiconductor device modeling IEEE Trans Comput-Aid Des 9 1990 1141 1149 [November]
    • (1990) IEEE Trans Comput-Aid des , vol.9 , pp. 1141-1149
    • Wachutka, G.K.1
  • 9
    • 0026172118 scopus 로고
    • Effect of p-body contact resistance on static current-voltage characteristics of vertical power DMOSFET's
    • K. Shenai Effect of p-body contact resistance on static current-voltage characteristics of vertical power DMOSFET's IEEE Electr Dev Lett 12 1991 270 272 [June]
    • (1991) IEEE Electr Dev Lett , vol.12 , pp. 270-272
    • Shenai, K.1
  • 10
    • 0031143848 scopus 로고    scopus 로고
    • Electrothermal effects during unclamped inductive switching (UIS) of power MOSFET's
    • K. Fischer, and K. Shenai Electrothermal effects during unclamped inductive switching (UIS) of power MOSFET's IEEE Trans Electr Dev 44 5 1997 874 878
    • (1997) IEEE Trans Electr Dev , vol.44 , Issue.5 , pp. 874-878
    • Fischer, K.1    Shenai, K.2
  • 11
    • 0024945562 scopus 로고    scopus 로고
    • Boundary of power MOSFET unclamped inductive switching (UIS), avalanche-current capability
    • March 1989
    • Rodney Stoltenburg R. Boundary of power MOSFET unclamped inductive switching (UIS), avalanche-current capability. In: IEEE applied power electronics conference proceedings; March 1989. p. 359-64.
    • IEEE Applied Power Electronics Conference Proceedings , pp. 359-364
    • Rodney Stoltenburg, R.1
  • 12
    • 36048981887 scopus 로고    scopus 로고
    • An equivalent-time temperature mapping system with a 320 × 256 pixels full-frame 100 kHz sampling rate
    • M. Riccio, G. Breglio, A. Irace, and P. Spirito An equivalent-time temperature mapping system with a 320 × 256 pixels full-frame 100 kHz sampling rate Rev Scientific Instrum 78 2007 10
    • (2007) Rev Scientific Instrum , vol.78 , pp. 10
    • Riccio, M.1    Breglio, G.2    Irace, A.3    Spirito, P.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.