Non-destructive high temperature characterisation of high-voltage IGBTs

Microelectronics Reliability

Volumn 42, Issue 9-11, 2002, Pages 1635-1640

  Busatto, G ^a   Cascone, B ^b   Fratelli, L ^b   Balsamo, M ^a   Iannuzzo, F ^a   Velardi, F ^a  

^a UNIVERSITY OF CASSINO AND SOUTHERN LAZIO   (Italy)

^b ANSALDOBREDA SpA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC MATERIALS; MICROELECTRONICS;

ENVIRONMENTAL TEMPERATURE; EXPERIMENTAL INVESTIGATIONS; EXPERIMENTAL SET UP; HIGH TEMPERATURE; INDUCTIVE LOADS; LARGE-OUTPUT CURRENTS; OPERATING CONDITION; PROTECTION CIRCUITS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 8744276949     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00205-6     Document Type: Article

References (9)

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