Enhanced leakage current performance and conduction mechanisms of Bi 1.5Zn 1.0Nb 1.5O 7/Ba 0.5Sr 0.5TiO 3 bilayered thin films

Journal of Applied Physics

Volumn 112, Issue 7, 2012, Pages

  Li, Ruguan ^a   Jiang, Shuwen ^a   Gao, Libin ^a   Li, Yanrong ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED FIELD; BILAYERED FILMS; BOTTOM ELECTRODES; BST THIN FILMS; CONDUCTION MECHANISM; CURRENT BEHAVIORS; CURRENT PERFORMANCE; CURRENT REDUCTION; FOWLER-NORDHEIM TUNNELING; HIGH ELECTRIC FIELDS; HIGH-FIELD REGIONS; NEGATIVE BIAS; OHMIC CONDUCTIVITY; POOLE-FRENKEL EMISSION; POSITIVE BIAS; POSITIVE VOLTAGE; POTENTIAL BARRIER HEIGHT; PT-ELECTRODES; RADIO FREQUENCY MAGNETRON SPUTTERING; SCHOTTKY EMISSIONS; THRESHOLD ELECTRIC FIELDS; TIO; TOP CONTACT;

ELECTRIC FIELDS; ELECTRODES; MAGNETRON SPUTTERING; PLATINUM; THIN FILMS; ZINC;

LEAKAGE CURRENTS;

EID: 84867531254     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4757952     Document Type: Article

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