Carbon-doped Ge 2Sb 2Te 5 phase change material: A candidate for high-density phase change memory application

Applied Physics Letters

Volumn 101, Issue 14, 2012, Pages

  Zhou, Xilin ^a,b   Wu, Liangcai ^a   Song, Zhitang ^a   Rao, Feng ^a   Zhu, Min ^a,b   Peng, Cheng ^a   Yao, Dongning ^a   Song, Sannian ^a   Liu, Bo ^a   Feng, Songlin ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; C ATOMS; C-DOPED; CARBON ADDITION; CARBON DOPING; DEGREE OF DISORDER; ELECTRICAL AND STRUCTURAL PROPERTIES; ELECTRICAL SWITCHING; HIGH-DENSITY PHASE; IN-SITU; MEMORY APPLICATIONS; MEMORY CELL; OPTICAL SPECTROSCOPY; PHASE CHANGES; X-RAY DIFFRACTION MEASUREMENTS;

CARBON; ELECTRIC PROPERTIES; PHASE CHANGE MEMORY; SEMICONDUCTOR DOPING; X RAY DIFFRACTION;

GERMANIUM;

EID: 84867496524     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4757137     Document Type: Article

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