Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2Te5 and Si 3.5Sb2Te3 materials

Acta Materialia

Volumn 60, Issue 1, 2012, Pages 323-328

  Rao, Feng ^a   Song, Zhitang ^a   Cheng, Yan ^a   Xia, Mengjiao ^a   Ren, Kun ^a   Wu, Liangcai ^a   Liu, Bo ^a   Feng, Songlin ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

Band gap; Density of localized states; Phase change

Indexed keywords

CELL-BASED; DENSITY OF LOCALIZED STATE; DENSITY OF LOCALIZED STATES; FILM MICROSTRUCTURES; IN-BAND; LOCALIZED STATE; PHASE CHANGE; RESISTIVITY CHANGES; TRANSITION PROCESS; URBACH TAIL;

AMORPHOUS FILMS; AMORPHOUS SILICON; ENERGY GAP; GERMANIUM; PHASE TRANSITIONS; SILICON;

PHASE CHANGE MEMORY;

EID: 80055031929     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2011.09.015     Document Type: Article

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