Scalable high-performance phase-change memory employing CVD GeBiTe

IEEE Electron Device Letters

Volumn 32, Issue 8, 2011, Pages 1113-1115

  Lee, Jinil ^a   Cho, Sunglae ^a   Ahn, Dongho ^a   Kang, Mansug ^a   Nam, Seokwoo ^a   Kang, Ho Kyu ^a   Chung, Chilhee ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Crystallization speed; endurance; GeBiTe (GBT); phase change random access memory (PRAM)

Indexed keywords

GEBITE (GBT); MEMORY APPLICATIONS; PHASE CHANGES; PHASE-CHANGE RANDOM ACCESS MEMORY;

CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; DURABILITY; PHASE CHANGE MEMORY;

RANDOM ACCESS STORAGE;

EID: 79960907292     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2157075     Document Type: Article

References (15)

1. R. Bez, "Development lines for phase change memory," in Proc. EPCOS, 2008.
2. G. W. Burr, M. J. Breitwisch, M. Franceschini, D. Garetto, K. Gopalakrishnan, B. Jackson, B. Kurdi, C. Lam, L. A. Lastras, A. Padilla, B. Rajendran, S. Raoux, and R. S. Shenoy, "Phase change memory technology," J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct., vol. 28, no. 2, pp. 223-262, Mar. 2010.
3. E. G. Yeo, L. P. Shi, R. Zhao, and T. C. Chong, "Investigation on ultra-high density and high speed non-volatile Phase Change Random Access Memory (PCRAM) by material engineering," in Proc. MRS Symp., vol. 918, Chalcogenide Alloys for Reconfigurable Electronics, 2006, pp. 29-34. (Pubitemid 44758599)
4. R. E. Simpson, D. W. Hewak, P. Fons, J. Tominaga, S. Guerin, and B. E. Hayden, "Reduction in crystallization time of Sb:Te films through addition of Bi," Appl. Phys. Lett., vol. 92, no. 14, pp. 141 921-1-141 921-3, Apr. 2008.
5. K. Wang, C. Steimer, D. Wamwangi, S. Ziegler, M. Wuttig, J. Tomforde, and W. Bensch, "Influence of doping upon the phase change characteristics of Ge2Sb2Te5," Microsyst. Technol., vol. 13, no. 2, pp. 203-206, Nov. 2006.
6. T.-J. Park, S.-Y. Choi, and M.-J. Kang, "Phase transition characteristics of Bi/Sn doped Ge2Sb2Te5 thin film for PRAM application," Thin Solid Films, vol. 515, no. 12, pp. 5049-5053, Apr. 2007. (Pubitemid 46399859)
7. T. Matsunaga and N. Yamada, "Crystallographic studies on high-speed phase-change materials," Jpn. J. Appl. Phys., vol. 43, no. 7B, pp. 4704-4712, Jul. 2004.
8. J. I. Lee, H. Park, S. L. Cho, Y. L. Park, B. J. Bae, J. H. Park, J. S. Park, H. G. An, J. S. Bae, D. H. Ahn, Y. T. Kim, H. Horii, S. A. Song, J. C. Shin, S. O. Park, H. S. Kim, U.-I. Chung, J. T. Moon, and B. I. Ryu, "Highly scalable phase change memory with CVD GeSbTe for sub 50 nm generation," in VLSI Symp. Tech. Dig., 2007, pp. 102-103.
9. C. W. Sun, M. S. Youm, and Y. T. Kim, "Crystallization behavior of non-stoichiometric Ge-Bi-Te ternary phase change materials for PRAM application," J. Phys.: Condens. Matter, vol. 19, no. 44, pp. 446 004-1-446 004-9, Nov. 2007.
10. R. Rajesh and J. Philip, "Carrier-type reversal in metal modified chalcogenide glasses: Results of thermal transport measurements," J. Appl. Phys., vol. 93, no. 12, pp. 9737-9742, Jun. 2003.
11. S. R. Elliott and A. T. Steel, "Mechanism for doping in Bi chalcogenide glasses," Phys. Rev. Lett., vol. 57, no. 11, pp. 1316-1319, Sep. 1986.
12. T.-Y. Lee, C. Kim, Y. Kang, D.-S. Suh, K. H. P. Kim, and Y. Khang, "Rapid crystallization of GeTe-Bi2Te3 mixed layer," Appl. Phys. Lett., vol. 92, no. 10, pp. 101 908-1-101 908-3, Mar. 2008.
13. J. F. Zheng, J. Reed, C. Schell, W. Czubatyj, R. Sandoval, J. Fournier, W. Li, W. Hunks, C. Dennison, S. Hudgens, and T. Lowrey, "MOCVD Ge3Sb2Te5 for PCM applications," IEEE Electron Device Lett., vol. 31, no. 9, pp. 999-1001, Sep. 2010.
14. U. Russo, D. Ielmini, A. Redaelli, and A. L. Lacaita, "Modeling of programming and read performance in phase-change memories-Part I: Cell optimization and scaling," IEEE Trans. Electron Devices, vol. 55, no. 2, pp. 506-514, Feb. 2008. (Pubitemid 351292038)
15. I. S. Kim, S. L. Cho, D. H. Im, E. H. Cho, D. H. Kim, G. H. Oh, D. H. Ahn, S. O. Park, S. W. Nam, J. T. Moon, and C. H. Chung, "High performance PRAM cell scalable to sub-20 nm technology with below 4F2 cell size, extendable to DRAM applications," in VLSI Symp. Tech. Dig., 2010, pp. 203-204.