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Physical Review B - Condensed Matter and Materials Physics

Volumn 86, Issue 16, 2012, Pages

Anisotropy of spin polarization and spin accumulation in Si/Al 2O 3/ferromagnet tunnel devices

(6) Sharma, S a,b Dash, S P c Saito, H a Yuasa, S a Van Wees, B J b Jansen, R a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

b UNIVERSITY OF GRONINGEN (Netherlands)

c CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84867464828 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.86.165308 Document Type: Article

Times cited : (22)

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