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Physica E: Low-Dimensional Systems and Nanostructures

Volumn 42, Issue 10, 2010, Pages 2673-2675

In-plane anisotropy of tunneling magnetoresistance and spin polarization in lateral spin injection devices with (Ga,Mn)As/GaAs spin-Esaki diode contacts

(6) Ciorga, M a Einwanger, A a Wurstbauer, U a Schuh, D a Wegscheider, W a Weiss, D a

a UNIVERSITY OF REGENSBURG (Germany)

Author keywords

Spin injection; Spin Esaki Zener diode; TAMR; TASP

Indexed keywords

APPLIED BIAS; DIODE STRUCTURE; ELECTRICAL SPIN INJECTION; ESAKI DIODE; GAAS; IN-PLANE ANISOTROPY; SPIN INJECTION; SPIN INJECTION DEVICES; SPIN-ESAKI-ZENER DIODE; TAMR; TASP; TUNNELING MAGNETORESISTANCE;

ANISOTROPY; DIODES; ELECTRIC RESISTANCE; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; MANGANESE; MANGANESE COMPOUNDS; SEMICONDUCTOR DEVICES; SPIN DYNAMICS; SPIN POLARIZATION; TUNNEL DIODES; ZENER DIODES;

SEMICONDUCTOR DIODES;

EID: 77958010149 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/j.physe.2010.04.004 Document Type: Conference Paper

Times cited : (3)

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