Very large tunneling anisotropic magnetoresistance of a (Ga, Mn)As/GaAs/(Ga, Mn)As stack

Physical Review Letters

Volumn 94, Issue 2, 2005, Pages

  Ruster C ^a   Gould, C ^a   Jungwirth, T ^b,c   Sinova, J ^d   Schott, G M ^a   Giraud, R ^a   Brunner, K ^a   Schmidt, G ^a   Molenkamp, L W ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b INSTITUTE OF PHYSICS   (Czech Republic)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^d TEXAS A AND M UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC MAGNETIZATION; METAL DEVICES; SPINTRONICS; TUNNELING ANISOTROPIC MAGNETORESISTANCE (TAMR);

AMPLIFICATION; ANISOTROPY; ELECTRIC CONDUCTIVITY; GALLIUM COMPOUNDS; MAGNETIC FIELD EFFECTS; MAGNETIZATION; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY;

ARSENIC;

EID: 18144425578     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.94.027203     Document Type: Article

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