Structural characterization of B-doped diamond nanoindentation tips

Journal of Materials Research

Volumn 26, Issue 24, 2011, Pages 3051-3057

  Sprouster, David J ^a   Ruffell, Simon ^a   Bradby, Jodie E ^a   Williams, James S ^a   Lockrey, Mark N ^b   Phillips, Matthew R ^b   Major, Ryan C ^c   Warren, Oden L ^c  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF TECHNOLOGY SYDNEY   (Australia)

^c Bruker Corporation   (United States)

Author keywords

Diamond; Electrical properties; Nanoindentation

Indexed keywords

DIAMONDS; ELECTRIC PROPERTIES; NANOINDENTATION; OHMIC CONTACTS; SUBSTRATES;

BORON CONCENTRATIONS; CHARACTERISTIC EMISSION; ELECTRICAL AND STRUCTURAL PROPERTIES; ELECTRICALLY ACTIVES; ELECTROMECHANICAL TESTING; RAMAN MICROSPECTROSCOPY; STRUCTURAL CHARACTERISTICS; STRUCTURAL CHARACTERIZATION;

BORON;

EID: 84867332784     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/jmr.2011.377     Document Type: Article

References (49)

1. M.I. Eremets, V.V. Struzhkin, H-K. Mao, and R.J. Hemley: Superconductivity in boron. Science 293, 272 (2001).
2. J.M. Besson, E.H. Mokhtari, J. Gonzalez, and G. Weill: Electrical properties of semimetallic silicon III and semiconductive silicon IV at ambient pressure. Phys. Rev. Lett. 59, 473 (1987).
3. R. Nowak, D. Chrobak, S. Nagao, D. Vodnick,M. Berg, A. Tukiainen, and M. Pessa: An electric current spike linked to nanoscale plasticity. Nat. Nanotechnol. 4, 287 (2009).
4. J.E. Bradby, J.S. Williams, and M.V. Swain: In situ electrical characterization of phase transformations in Si during indentation. Phys. Rev. B 67, 085205 (2003).
5. S. Ruffell, J.E. Bradby, J.S. Williams, and O.L. Warren: An in situ electrical measurement technique via a conducting diamond tip for nanoindentation in silicon. J. Mater. Res. 22, 578 (2007).
6. A.B. Mann, D. van Heerden, J.B. Pethica, and T.P. Weihs: Sizedependent phase transformations during point loading of silicon. J. Mater. Res. 15, 1754 (2000).
7. S. Ruffell, K. Sears, A.P. Knights, J.E. Bradby, and J.S. Williams: Experimental evidence for semiconducting behavior of Si-XII. Phys. Rev. B 83, 075316 (2011).
8. L. Fang, C.L. Muhlstein, J.G. Collins, A.L. Romasco, and L.H. Friedman: Continuous electrical in situ contact area measurement during instrumented indentation. J.Mater. Res. 23, 2480 (2008).
9. N. Fujisawa, S. Ruffell, J.E. Bradby, J.S. Williams, B. Haberl, and O.L. Warren: Understanding pressure-induced phase-transformation behavior in silicon through in situ electrical probing under cyclic loading conditions. J. Appl. Phys. 105, 106111 (2009).
10. S. Ruffell, J.E. Bradby, N. Fujisawa, and J.S. Williams: Identification of nanoindentation-induced phase changes in silicon by in situ electrical characterization. J. Appl. Phys. 101, 083531 (2007).
11. M. Bhaskaran, S. Sriram, S. Ruffell, and A. Mitchell: Nanoscale characterization of energy generation from piezoelectric thin films. Adv. Funct. Mater. 21, 2251 (2011).
12. Hysitron: TI-950-TriboIndenter. http://www.hysitron.com/products/ ti-series/ti-950-triboindenter.
13. S.V. Kalinin, B.J. Rodriguez, S. Jesse, E. Karapetian, B. Mirman, E.A. Eliseev, and A.N.Morozovska: Nanoscale electromechanics of ferroelectric and biological systems: A new dimension in scanningprobe microscopy. Annu. Rev. Mater. Res. 37, 189 (2007).
14. R. Holm: Electric Contacts; Theory and Applications (Springer, New York, 2000).
15. T. Tachibana, B.E. Williams, and J.T. Glass: Correlation of the electrical properties of metal contacts on diamond films with the chemical nature of the metal-diamond interface. i. gold contacts: A non-carbide-forming metal. Phys. Rev. B 45, 11968 (1992).
16. T. Tachibana, B.E. Williams, and J.T. Glass: Correlation of the electrical properties of metal contacts on diamond films with the chemical nature of the metal-diamond interface. ii. Titanium contacts: A carbide-forming metal. Phys. Rev. B 45, 11975 (1992).
17. R.J. Trew, J.B. Yan, and P.M. Mock: The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications. Proc. IEEE 79, 598 (1991).
18. K. Thonke: The boron acceptor in diamond. Semicond. Sci. Technol. 18, S20 (2003).
19. N. Tumilty, J. Welch, R. Lang, C.Wort, R. Balmer, and R.B. Jackman: An impedance spectroscopic investigation of the electrical properties of delta-doped diamond structures. J. Appl. Phys. 106, 103707 (2009).
20. N. Iwashita, M.V. Swain, J.S. Field, N. Ohta, and S. Bitoh: Elastoplastic deformation of glass -like carbons heat-treated at different temperatures. Carbon 39, 1525 (2001).
21. P.K. Baumann and R.J. Nemanich: Electron affinity and Schottky barrier height of metaldiamond (100), (111), and (110) interfaces. J. Appl. Phys. 83, 2072 (1998).
22. A.T. Collins, A. Connor, C.H. Ly, A. Shareef, and P.M. Spear: High-temperature annealing of optical centers in type-i diamond. J. Appl. Phys. 97, 083517 (2005).
23. A.T. Collins and G.S. Woods: Cathodoluminescence from giant platelets, and of the 2.526 eV vibronic system, in type Ia diamonds. Philos. Mag. B 45, 385 (1982).
24. P.B. Klein, M.D. Crossfield, J.A. Freitas Jr., and A.T. Collins: Donor-acceptor pair recombination in synthetic type-iib semiconducting diamond. Phys. Rev. B 51, 9634 (1995).
25. L.H. Robins, L.P. Cook, E.N. Farabaugh, and A. Feldman: Cathodoluminescence of defects in diamond films and particles grown by hot-filament chemical-vapor deposition. Phys. Rev. B 39, 13367 (1989).
26. M. Kadri, D. Araujo, M. Wade, A. Deneuville, and E. Bustarret: Effect of oxygen on the cathodoluminescence signal from excitons, impurities and structural defects in homoepitaxial (100) diamond films. Diamond Relat. Mater. 14, 566 (2005).
27. L.H. Robins, E.N. Farabaugh, and A. Feldman: Cathodoluminescence spectroscopy of free and bound excitons in chemical-vapordeposited diamond. Phys. Rev. B 48, 14167 (1993).
28. H. Sternschulte, J. Horseling, T. Albrecht, and K. Thonke: Characterization of doped and undoped CVD-diamond films by cathodoluminescence. Diamond Relat. Mater. 5, 585 (1996).
29. D. Takeuchi, H. Watanabe, S. Yamanaka, H. Okushi, H. Sawada, H. Ichinose, T. Sekiguchi, and K. Kajimura: Origin of band-A emission in diamond thin films. Phys. Rev. B 63, 245328 (2001).
30. H. Kawarada, H. Matsuyama, Y. Yokota, T. Sogi, A. Yamaguchi, and A. Hiraki: Excitonic recombination radiation in undoped and boron-doped chemical-vapor-deposited diamonds. Phys. Rev. B 47, 3633 (1993).
31. H. Kawarada, Y. Yokota, and A. Hiraki: Intrinsic and extrinsic recombination radiation from undoped and boron-doped diamonds formed by plasma chemical vapor deposition. Appl. Phys. Lett. 57, 1889 (1990).
32. R.J. Graham, T.D. Moustakas, and M.M. Disko: Cathodoluminescence imaging of defects and impurities in diamond films grown by chemical vapor deposition. J. Appl. Phys. 69, 3212 (1991).
33. S. Koizumi, K. Watanabe, M. Hasegawa, and H. Kanda: Ultraviolet emission from a diamond pn junction. Science 292, 1899 (2001).
34. S.C. Lawson, H. Kanda, H. Kiyota, T. Tsutsumi, and H. Kawarada: Cathodoluminescence from high-pressure synthetic and chemicalvapor- deposited diamond. J. Appl. Phys. 77, 1729 (1995).
35. P. Muret and M. Wade: Acceptor compensation by dislocations related defects in boron doped homoepitaxial diamond films from cathodoluminescence and Schottky diodes current-voltage characteristics. Phys. Status Solidi A 203, 3142 (2006).
36. C. Baron, A. Deneuville, M. Wade, F. Jomard, and J. Chevallier: Cathodoluminescence measurements on heavily boron doped homoepitaxial diamond films and their interfaces with their Ib substrates. Phys. Status Solidi A 203, 544 (2006).
37. H. Kawarada, Y. Yokota, Y. Mori, K. Nishimura, and A. Hiraki: Cathodoluminescence and electroluminescence of undoped and boron-doped diamond formed by plasma chemical vapor deposition. J. Appl. Phys. 67, 983 (1990).
38. P.J. Dean: Bound excitons and donor-acceptor pairs in natural and synthetic diamond. Phys. Rev. 139, A588 (1965).
39. J. Ruan, K. Kobashi, and W.J. Choyke: On the band-A emission and boron related luminescence in diamond. Appl. Phys. Lett. 60, 3138 (1992).
40. D.S. Knight and W.B. White: Characterization of diamond films by Raman spectroscopy. J. Mater. Res. 4, 385 (1989).
41. K. Nishimura, K. Das, and J.T. Glass: Material and electrical characterization of polycrystalline boron-doped diamond films grown by microwave plasma chemical vapor deposition. J. Appl. Phys. 69, 3142 (1991).
42. M. Mermoux, F. Jomard, C. Tavars, F. Omns, and E. Bustarret: Raman characterization of boron-doped 111 homoepitaxial diamond layers. Diamond Relat. Mater. 15, 572 (2006).
43. M. Mermoux, B. Marcus, G.M. Swain, and J.E. Butler: A confocal Raman imaging study of an optically transparent boron-doped diamond electrode. J. Phys. Chem. B 106, 10816 (2002).
44. S. Szunerits, M. Mermoux, A. Crisci, B. Marcus, P. Bouvier, D. Delabouglise, J.P. Petit, S. Janel, R. Boukherroub, and L. Tay: Raman imaging and Kelvin probe microscopy for the examination of the heterogeneity of doping in polycrystalline boron-doped diamond electrodes. J. Phys. Chem. B 110, 23888 (2006).
45. E. Bourgeois, E. Bustarret, P. Achatz, F. Omnes, and X. Blase: Impurity dimers in superconducting B-doped diamond: Experiment and first-principles calculations. Phys. Rev. B 74, 094509 (2006).
46. J.P. Goss and P.R. Briddon: Theory of boron aggregates in diamond: First-principles calculations. Phys. Rev. B 73, 085204 (2006).
47. J.W. Ager III, W. Walukiewicz, M. Mc Cluskey, M.A. Plano, and M.I. Landstrass: Fano interference of the Raman phonon in heavily boron-doped diamond films grown by chemical vapor deposition. Appl. Phys. Lett. 66, 616 (1995).
48. P. Gonon, E. Gheeraert, A. Deneuville, F. Fontaine, L. Abello, and G. Lucazeau: Characterization of heavily B-doped polycrystalline diamond films using Raman spectroscopy and electron spin resonance. J. Appl. Phys. 78, 7059 (1995).
49. F. Pruvost and A. Deneuville: Analysis of the Fano in diamond. Diamond Relat. Mater. 10, 531 (2001).