Understanding pressure-induced phase-transformation behavior in silicon through in situ electrical probing under cyclic loading conditions

Journal of Applied Physics

Volumn 105, Issue 10, 2009, Pages

  Fujisawa, N ^a   Ruffell, S ^a   Bradby, J E ^a   Williams, J S ^a   Haberl, B ^a   Warren, O L ^b  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b Bruker Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE SILICONS; CYCLIC INDENTATION; CYCLIC LOADING CONDITIONS; CYCLIC LOADINGS; ELECTRICAL MEASUREMENT; HIGH PRESSURE; IN-SITU; INDENT VOLUME; PRESSURE-INDUCED PHASE; SEQUENTIAL CHANGES; TRANSFORMATION BEHAVIOR; UNLOADING CURVES;

CYCLIC LOADS; ELECTRIC NETWORK ANALYSIS; GRAPH THEORY; SILICON; UNLOADING;

AMORPHOUS SILICON;

EID: 66549112439     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3130154     Document Type: Article

References (21)

1. J. C. Jamieson, Science 0036-8075 139, 762 (1963). 10.1126/science.139. 3556.762
2. J. Z. Hu, L. D. Merkle, C. S. Menoni, and I. L. Spain, Phys. Rev. B 0163-1829 34, 4679 (1986). 10.1103/PhysRevB.34.4679
3. V. Domnich and Y. Gogotsi, Rev. Adv. Mater. Sci. 1606-5131 3, 1 (2002). 10.1016/S1468-6996(01)00150-4
4. J. Crain, G. J. Ackland, J. R. Maclean, R. O. Piltz, P. D. Hatton, and G. S. Pawley, Phys. Rev. B 0163-1829 50, 13043 (1994). 10.1103/PhysRevB.50.13043
5. R. O. Piltz, J. R. Maclean, S. J. Clark, G. J. Ackland, P. D. Hatton, and J. Crain, Phys. Rev. B 0163-1829 52, 4072 (1995). 10.1103/PhysRevB.52.4072
6. V. Domnich, Y. Gogotsi, and S. Dub, Appl. Phys. Lett. 0003-6951 76, 2214 (2000). 10.1063/1.126300
7. J. E. Bradby, J. S. Williams, J. Wong-Leung, M. V. Swain, and P. Munroe, J. Mater. Res. 0884-2914 16, 1500 (2001). 10.1557/JMR.2001.0209
8. T. Juliano, Y. Gogotsi, and V. Domnich, J. Mater. Res. 0884-2914 18, 1192 (2003). 10.1557/JMR.2003.0164
9. J. I. Jang, M. J. Lance, S. Wen, T. Y. Tsui, and G. M. Pharr, Acta Mater. 1359-6454 53, 1759 (2005). 10.1016/j.actamat.2004.12.025
10. J. Yan, H. Takahashi, X. Gai, H. Harada, J. Tamaki, and T. Kuriyagawa, Mater. Sci. Eng., A 0921-5093 423, 19 (2006). 10.1016/j.msea.2005.09.120
11. S. Ruffell, J. E. Bradby, J. S. Williams, and P. Munroe, J. Appl. Phys. 0021-8979 102, 063521 (2007). 10.1063/1.2781394
12. G. M. Pharr, W. C. Oliver, and D. R. Clarke, J. Electron. Mater. 0361-5235 19, 881 (1990). 10.1007/BF02652912
13. I. Zarudi, L. C. Zhang, and M. V. Swain, Appl. Phys. Lett. 0003-6951 82, 1027 (2003). 10.1063/1.1541110
14. N. Fujisawa, J. S. Williams, and M. V. Swain, J. Mater. Res. 0884-2914 22, 2992 (2007). 10.1557/jmr.2007.0406
15. S. Ruffell, J. E. Bradby, J. S. Williams, and O. L. Warren, J. Mater. Res. 0884-2914 22, 578 (2007). 10.1557/jmr.2007.0100
16. S. Ruffell, J. E. Bradby, N. Fujisawa, and J. S. Williams, J. Appl. Phys. 0021-8979 101, 083531 (2007). 10.1063/1.2724803
17. J. E. Bradby, J. S. Williams, and M. V. Swain, Phys. Rev. B 0163-1829 67, 085205 (2003). 10.1103/PhysRevB.67.085205
18. W. C. Oliver and G. M. Pharr, J. Mater. Res. 0884-2914 19, 3 (2004). 10.1557/jmr.2004.19.1.3
19. B. G. Pfrommer, M. Cote, S. G. Louie, and M. L. Cohen, Phys. Rev. B 0163-1829 56, 6662 (1997). 10.1103/PhysRevB.56.6662
20. B. D. Malone, J. D. Sau, and M. L. Cohen, Phys. Rev. B 0163-1829 78, 035210 (2008). 10.1103/PhysRevB.78.035210
21. B. D. Malone, J. D. Sau, and M. L. Cohen, Phys. Rev. B 0163-1829 78, 161202 (R) (2008). 10.1103/PhysRevB.78.161202