In situ electrical characterization of phase transformations in Si during indentation

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 8, 2003, Pages

  Bradby, J E ^a   Williams, J S ^a   Swain, M V ^b  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF SYDNEY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMOND; SILICON;

ARTICLE; CALCULATION; CRYSTAL; DIODE; ELECTRIC CURRENT; ELECTRIC RESISTANCE; KINETICS; MATHEMATICAL ANALYSIS; MEASUREMENT; MECHANICS; PHASE TRANSITION; PRESSURE;

EID: 0037304426     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.67.085205     Document Type: Article

References (23)

1. J Z. Hu, L D. Merkle, C S. Menoni, and I L. Spain, Phys. Rev. B34, 4679 (1986).
2. R O. Piltz, Phys. Rev. B52, 4072 (1995).
3. D R. Clarke, M C. Kroll, P D. Kirchner, R F. Cook, and B J. Hockey, Phys. Rev. Lett.60, 2156 (1988).
4. G M. Pharr, W C. Oliver, and D S. Harding, J. Mater. Res.6, 1129 (1991).
5. G M. Pharr, W C. Oliver, R F. Cook, P D. Kirchner, M C. Kroll, T R. Dinger, and D R. Clarke, J. Mater. Res.7, 961 (1992).
6. E R. Weppelmann, J S. Field, and M V. Swain, J. Mater. Res.8, 830 (1993).
7. J S. Williams, Y. Chen, J. Wong-Leung, A. Kerr, and M V. Swain, J. Mater. Res.14, 2338 (1999).
8. J E. Bradby, J S. Williams, J. Wong-Leung, M V. Swain, and P. Munroe, J. Mater. Res.16, 1500 (2001).
9. J E. Bradby, J S. Williams, J. Wong-Leung, M V. Swain, and P. Munroe, Appl. Phys. Lett.77, 3749 (2000).
10. A B. Mann, H. Van, D J B. Pethica, and T. Weihs, J. Mater. Res.15, 1754 (2000).
11. V. Domnich, Y. Gogotsi, and S. Dub, Appl. Phys. Lett.76, 2214 (2000).
12. A. Kailer, Y G. Gogotsi, and K G. Nickel, J. Appl. Phys.81, 3057 (1997).
13. Y G. Gogotsi, V. Domnich, S N. Dub, A. Kailer, and K G. Nickel, J. Mater. Res.15, 871 (2000).
14. I. Zarudi and L C. Zhang, Tribol. Int.32, 701 (1999).
15. H. Saka and S. Abe, J. Electron Microsc.46, 45 (1997).
16. J J. Gilman, Philos. Mag. B67, 207 (1993).
17. I V. Gridneva, Y V. Milman, and V I. Trefilov, Phys. Status Solidi A14, 117 (1972).
18. G S. Smith, E B. Tadmor, and E. Kaxiras, Phys. Rev. Lett.84, 1260 (2000).
19. J S. Field and M V. Swain, J. Mater. Res.8, 297 (1993).
20. The position of the “pop-in” event can be clearly seen by taking the derivative of the load-unload curve. It can also be observed directly from the load-unload curve by looking along the line of the data.
21. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts (Oxford University Press, Oxford, 1988).
22. D. Tabor, The Hardness of Metals (Oxford University Press, Oxford, 1951).
23. T. Chudoba and N. Schwarzer, SCISOFT ELASTICA Version 1.01, TU Chemnitz, 1999.