Cathodoluminescence measurements on heavily boron doped homoepitaxial diamond films and their interfaces with their Ib substrates

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 3, 2006, Pages 544-550

  Baron, C ^a   Deneuville, A ^a   Wade, M ^a   Jomard, F ^b   Chevallier, J ^b  

^a LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^b Centre National de la Recherche Scientifique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HOMOEPITAXY; INTERFACIAL LAYERS; NANOCRYSTALLINE DIAMONDS;

BORON; CATHODOLUMINESCENCE; DOPING (ADDITIVES); EPITAXIAL GROWTH; INTERFACES (MATERIALS); SECONDARY ION MASS SPECTROMETRY;

DIAMOND FILMS;

EID: 33644661374     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200521448     Document Type: Article

References (19)

1. M. Werner, O. Dorsch, H. U. Baerwind, A. Ersoy, E. Obermeier, C. Johnston, S. Romani, P. R. Chalker, V. Moore, and I. M. Bukcley-Golder, Diam. Relat. Mater. 3, 983 (1994).
2. F. Pruvost, E. Bustarret, and A. Deneuville, Diam. Relat. Mater. 9, 295 (2000).
3. E. Bustarret, J. Kacmarcik, C. Marcenat, E. Gheeraert, C. Cytermann, J. Marcus, and T. Klein, Phys. Rev. Lett. 93, 237005 (2004).
4. P. Schmid, F. J. Hernandez-Guillen, and E. Kohn, Diam. Relat. Mater. 12, 418 (2003).
5. L. Gherardini, P. Michaud, M. Panizza, C. H. Comninellis, and N. Vasistas, J. Electrochem. Soc. 148, D78 (2001).
6. A. N. Ndao, F. Zénia, A. Deneuville, M. Bernard, and C. Levy-Clément, Diam. Relat. Mater. 9, 1175 (2000).
7. R. Sauer, in: Thin Film Diamond I, Semiconductors and Semimetals, Vol. 76, edited by C. E. Nebel and J. Ristein (Academic Press, San Diego, 2003), p. 379.
8. A. M. Zaitsev, Optical Properties of Diamond (Springer-Verlag, Berlin-Heidelberg, 2001).
9. Y. Yokota, T. Tachibana, K. Miyata, K. Hayashi, K. Kobashi, A. Hatta, T. Ito, A. Hiraki, and Y. Shintani, Diam. Relat. Mater. 8, 1587 (1999).
10. H. Sternchulte, T. Albrecht, K. Thonke, and R. Sauer, in: The Physics of Semiconductors, edited by M. Scheffler and R. Zimmerman (World Scientific, Singapore, 1996), p. 169.
11. M. Kadri, C. Baron, and A. Deneuville, Diam. Relat. Mater. 13, 569 (2004).
12. P. J. Dean, E. C. Lightowlers, and D. R. Wight, Phys. Rev. A 140, 352 (1965).
13. C. Baron, M. Wade, A. Deneuville, E. Bustarret, T. Kocinewski, J. Chevallier, C. Uzan-Saguy, R. Kalish, and J. Butler, Diam. Relat. Mater. 14, 350 (2005).
14. C. Baron, M. Wade, A. Deneuville, F. Jomard, and J. Chevallier, unpublished.
15. H. Watanabe and H. Okushi, Jpn. J. Appl. Phys. 39, L835 (2000).
16. H. Kawarada, H. Matsuyama, Y. Yokota, T. Sogi, A. Yamaguchi, and A. Hiraki, Phys. Rev. 47, 3633 (1993).
17. H. Kawarada and A. Yamaguchi, Diam. Relat. Mater. 2, 100 (1993).
18. M. Kasu, M. Kubovic, A. Aleksov, N. Teofilov, Y. Taniyasu, R. Sauer, E. Kohn, T. Makimoto, and N. Kobayashi, Diam. Relat. Mater. 13, 226 (2004).
19. F. Brunet, P. Germi, M. Pernet, A. Deneuville, E. Gheeraert, F. Laugier, M. Burdin, and G. Rolland, J. Appl. Phys. 83, 181 (1998).