메뉴 건너뛰기




Volumn 83, Issue 7, 2011, Pages

Experimental evidence for semiconducting behavior of Si-XII

Author keywords

[No Author keywords available]

Indexed keywords


EID: 79961062161     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.83.075316     Document Type: Article
Times cited : (34)

References (31)
  • 2
    • 3743137064 scopus 로고
    • 0300-9734 10.1126/science.139.3552.338-a
    • R.H. Wentore, Jr. and J. S. Kasper, Science 0300-9734 10.1126/science.139.3552.338-a 139, 338 (1963).
    • (1963) Science , vol.139 , pp. 338
    • Wentore, Jr.R.H.1    Kasper, J.S.2
  • 10
    • 33748285994 scopus 로고    scopus 로고
    • High pressure crystalline phase formation during nanoindentation: Amorphous versus crystalline silicon
    • DOI 10.1063/1.2339039
    • S. Ruffell, J. E. Bradby, and J.S. Williams, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2339039 89, 091919 (2006). (Pubitemid 44319932)
    • (2006) Applied Physics Letters , vol.89 , Issue.9 , pp. 091919
    • Ruffell, S.1    Bradby, J.E.2    Williams, J.S.3
  • 12
    • 34848893013 scopus 로고    scopus 로고
    • Formation and growth of nanoindentation-induced high pressure phases in crystalline and amorphous silicon
    • DOI 10.1063/1.2781394
    • S. Ruffell, J. E. Bradby, J. S. Williams, and P. Munroe, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2781394 102, 063521 (2007). (Pubitemid 47508933)
    • (2007) Journal of Applied Physics , vol.102 , Issue.6 , pp. 063521
    • Ruffell, S.1    Bradby, J.E.2    Williams, J.S.3    Munroe, P.4
  • 14
    • 48749083599 scopus 로고    scopus 로고
    • 1098-0121 10.1103/PhysRevB.78.035210
    • B. D. Malone, J. D. Sau, and M. L. Cohen, Phys. Rev. B 1098-0121 10.1103/PhysRevB.78.035210 78, 035210 (2008).
    • (2008) Phys. Rev. B , vol.78 , pp. 035210
    • Malone, B.D.1    Sau, J.D.2    Cohen, M.L.3
  • 17
    • 33947239983 scopus 로고    scopus 로고
    • Identification of nanoindentation-induced phase changes in silicon by in situ electrical characterization
    • DOI 10.1063/1.2724803
    • S. Ruffell, J. E. Bradby, N. Fujisawa, and J. S. Williams, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2724803 101, 083531 (2007). (Pubitemid 46685368)
    • (2007) Journal of Applied Physics , vol.101 , Issue.8 , pp. 083531
    • Ruffell, S.1    Bradby, J.E.2    Fujisawa, N.3    Williams, J.S.4
  • 18
    • 33947220218 scopus 로고    scopus 로고
    • An in situ electrical measurement technique via a conducting diamond tip for nanoindentation in silicon
    • DOI 10.1557/jmr.2007.0100
    • S. Ruffell, J. E. Bradby, and J. S. Williams, J. Mater. Res. JMREEE 0884-2914 10.1557/jmr.2007.0100 22, 578 (2007). (Pubitemid 46421244)
    • (2007) Journal of Materials Research , vol.22 , Issue.3 , pp. 578-586
    • Ruffell, S.1    Bradby, J.E.2    Williams, J.S.3    Warren, O.L.4
  • 20
    • 33745644044 scopus 로고    scopus 로고
    • Size effects in the nanoindentation of silicon at ambient temperature
    • DOI 10.1080/14786430600586507, PII Q33266350
    • D. Ge, A. M. Minor, E. A. Stach, and J. W. Morris Jr., Philos. Mag. 1478-6435 10.1080/14786430600586507 86, 25-26: 4069 (2006). (Pubitemid 43970630)
    • (2006) Philosophical Magazine , vol.86 , Issue.25-26 , pp. 4069-4080
    • Ge, D.1    Minor, A.M.2    Stach, E.A.3    Morris Jr., J.W.4
  • 21
    • 13844280308 scopus 로고    scopus 로고
    • Indentation-induced phase transformations in silicon: Influences of load, rate and indenter angle on the transformation behavior
    • DOI 10.1016/j.actamat.2004.12.025, PII S135964540400761X
    • J.-i. Jang, M. J. Lance, S. Wen, T. Y. Tsui, and G. M. Pharr, Acta Mater. ACMAFD 1359-6454 10.1016/j.actamat.2004.12.025 53, 1759 (2005). (Pubitemid 40245694)
    • (2005) Acta Materialia , vol.53 , Issue.6 , pp. 1759-1770
    • Jang, J.-I.1    Lance, M.J.2    Wen, S.3    Tsui, T.Y.4    Pharr, G.M.5
  • 22
  • 24
    • 0038004939 scopus 로고    scopus 로고
    • JMREEE 0884-2914 10.1557/JMR.2003.0104
    • I. Zarudi, L. C. Zhang, and M. V. Swain, J. Mater. Res. JMREEE 0884-2914 10.1557/JMR.2003.0104 18, 758 (2003).
    • (2003) J. Mater. Res. , vol.18 , pp. 758
    • Zarudi, I.1    Zhang, L.C.2    Swain, M.V.3
  • 26
    • 0016597193 scopus 로고
    • JAPIAU 0021-8979 10.1063/1.321593
    • J.Y. W. Seto, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.321593 46, 5247 (1975).
    • (1975) J. Appl. Phys. , vol.46 , pp. 5247
    • Seto, J.Y.W.1
  • 29
    • 0036498168 scopus 로고    scopus 로고
    • Development of refractory ohmic contact materials for gallium arsenide compound semiconductors
    • DOI 10.1016/S1468-6996(01)00150-4, PII S1468699601001504
    • V. Domnich and Y. Gogotsi, Rev. Adv. Mater. Sci. 1468-6996 10.1016/S1468-6996(01)00150-4 3, 1 (2002). (Pubitemid 34141154)
    • (2002) Science and Technology of Advanced Materials , vol.3 , Issue.1 , pp. 1-27
    • Murakami, M.1
  • 30
    • 0033249316 scopus 로고    scopus 로고
    • PSSBBD 0370-1972 10.1002/(SICI)1521-3951(199901)211:1413::AID-PSSB4133.0. CO;2-B
    • H. Olijnyk and A.P. Jephcoat, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/(SICI)1521-3951(199901)211:1413::AID-PSSB4133.0.CO;2-B 211, 413 (1999).
    • (1999) Phys. Status Solidi B , vol.211 , pp. 413
    • Olijnyk, H.1    Jephcoat, A.P.2
  • 31
    • 55349098801 scopus 로고    scopus 로고
    • 1098-0121 10.1103/PhysRevB.78.161202
    • B. D. Malone, J. D. Sau, and M. L. Cohen, Phys. Rev. B 1098-0121 10.1103/PhysRevB.78.161202 78, 161202 (R) (2008).
    • (2008) Phys. Rev. B , vol.78 , pp. 161202
    • Malone, B.D.1    Sau, J.D.2    Cohen, M.L.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.