Modeling heterostructures with schrödingerpoissonnavier iterative schemes, effect of carrier charge, and influence of electromechanical coupling

Nano

Volumn 7, Issue 4, 2012, Pages

  Mahapatra, D Roy ^a   Willatzen, M ^b   Melnik, R V N ^c,d   Lassen, B ^b  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b UNIVERSITY OF SOUTHERN DENMARK   (Denmark)

^c WILFRID LAURIER UNIVERSITY   (Canada)

^d BASQUE FOUNDATION FOR SCIENCE   (Spain)

Author keywords

band edge; carrier charge; finite element method; nanostructures; piezoelectricity; polarization; Strain

Indexed keywords

ALN/GAN; BAND EDGE; CARRIER CHARGE; ELECTRO-MECHANICAL FIELDS; ELECTRONIC ENERGIES; ELECTRONIC WAVE FUNCTIONS; FIELD DISTRIBUTION; ITERATIVE SCHEMES; OPTOELECTRONIC PROPERTIES; QUASI-FERMI LEVEL; SELF-CONSISTENT PROCEDURES; SEMICONDUCTOR HETEROJUNCTIONS; SPONTANEOUS POLARIZATIONS; STRESS-FREE BOUNDARY CONDITIONS;

BOUNDARY CONDITIONS; CRYSTALLOGRAPHY; ELECTROMECHANICAL COUPLING; FINITE ELEMENT METHOD; HETEROJUNCTIONS; NANOSTRUCTURES; PIEZOELECTRIC DEVICES; PIEZOELECTRICITY; POLARIZATION; STRAIN; ZINC SULFIDE;

ITERATIVE METHODS;

EID: 84867301745     PISSN: 17932920     EISSN: None     Source Type: Journal    
DOI: 10.1142/S1793292012500312     Document Type: Review

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