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Physical Review B - Condensed Matter and Materials Physics

Volumn 84, Issue 15, 2011, Pages

Manipulation of the Landé g factor in InAs quantum dots through the application of anisotropic gate potentials: Exact diagonalization, numerical, and perturbation methods

(3) Prabhakar, Sanjay a Raynolds, James E b Melnik, Roderick a,c

a WILFRID LAURIER UNIVERSITY (Canada)

b Sterne Kessler Goldstein and Fox PLLC (United States)

c UNIVERSITY OF JYVÄSKYLÄ (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 80455129681 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.84.155208 Document Type: Article

Times cited : (23)

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