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Journal of Applied Physics

Volumn 108, Issue 6, 2010, Pages

Influence of electromechanical effects and wetting layers on band structures of AlN/GaN quantum dots and spin control

(2) Prabhakar, Sanjay a Melnik, Roderick a,b

a WILFRID LAURIER UNIVERSITY (Canada)

b BCAM BASQUE CENTER FOR APPLIED MATHEMATICS (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED MAGNETIC FIELDS; BAND GAP ENGINEERING; ELASTIC EFFECTS; ELECTRIC AND MAGNETIC FIELDS; ELECTROELASTICITY; ELECTROMECHANICAL EFFECTS; ELECTRON SPINS; EXTERNAL MAGNETIC FIELD; FULLY-COUPLED MODEL; IN-BAND; LOW-DIMENSIONAL SEMICONDUCTORS; MECHANICAL FIELD; OPTICAL RESPONSE; OPTOELECTRONIC PROPERTIES; OTHER APPLICATIONS; PAULI SPIN MATRICES; PIEZO-ELECTRIC EFFECTS; QUANTUM DOT; QUANTUM DOTS; SPIN CONTROL; SPIN SPLITTINGS; SPIN-ORBIT EFFECTS; TUNING PARAMETER; WETTING LAYER;

BAND STRUCTURE; ELECTROMAGNETISM; ELECTRON GAS; LIGHT EMITTING DIODES; LOGIC DEVICES; OPTOELECTRONIC DEVICES; PIEZOELECTRICITY; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SPIN DYNAMICS; TUNING; TWO DIMENSIONAL ELECTRON GAS;

MAGNETIC FIELD EFFECTS;

EID: 77957746487 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3485602 Document Type: Article

Times cited : (14)

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