Defects-enhanced flexoelectricity in nanostructures

Procedia Engineering

Volumn 1, Issue 1, 2009, Pages 105-108

  Patil, Sunil R ^a   Melnik, Roderick ^a  

^a WILFRID LAURIER UNIVERSITY   (Canada)

Author keywords

Defects; Flexoelectrocity; Nanostructures

Indexed keywords

CONSTITUTIVE EQUATIONS; DEFECTS; ELECTRIC FIELDS; FINITE ELEMENT METHOD; GALLIUM NITRIDE; SEMICONDUCTOR QUANTUM DOTS; WIDE BAND GAP SEMICONDUCTORS;

CONSTITUTIVE RELATIONS; ELECTROMECHANICAL EFFECTS; ELECTROMECHANICAL PROPERTY; FLEXOELECTRIC EFFECTS; FLEXOELECTROCITY; LOW DIMENSIONAL NANOSTRUCTURES; MECHANICAL AND ELECTRICAL; OPTOELECTRONIC APPLICATIONS;

NANOSTRUCTURES;

EID: 68949103756     PISSN: None     EISSN: 18777058     Source Type: Conference Proceeding    
DOI: 10.1016/j.proeng.2009.06.025     Document Type: Conference Paper

References (7)

1. Bahrami-Samani M, Melnik RVN. Electrostriction effect in GaN quantum dots. submitted 2009
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3. Patil SR, Melnik RVN. Thermoelectromechanical effects in quantum dots. Nanotechnology 2009; 12:125402
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5. Bester G, Wu X, Vanderbilt D, Zunger A. Importance of second-order piezoelectric effects in zinc-blende semiconductors. Phys. Rev. Lett. 2006;96:187602
6. Melnik R and Mahapatra R Coupled effects in quantum dot nanostructures with nonlinear strain and bridging modelling scales. Comput. Struct. 2007; 85: 698-711 (Pubitemid 46722724)
7. Lassen B, Willatzen M and Melnik R Inclusion of nonlinear strain effects in the Hamiltonian for nanoscale semiconductor structures. J. Comput. Theor. Nanosci. 2006; 3:588-597 (Pubitemid 46004596)