Magneto-optical spectrum of ZnO nanorods

Journal of Applied Physics

Volumn 111, Issue 4, 2012, Pages

  Xiong, Wen ^a  

^a CHONGQING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCULARLY POLARIZED; EFFECTIVE-MASS THEORY; HIGH POTENTIAL; HOLE STATE; INTER-BAND TRANSITION; MAGNETO-OPTICAL SPECTRA; SCHRDINGER EQUATIONS; SUBBANDS; WURTZITE STRUCTURE; ZNO NANOROD;

MAGNETIC FIELDS; NANORODS; ZINC OXIDE; ZINC SULFIDE;

HAMILTONIANS;

EID: 84857859386     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3686139     Document Type: Article

References (26)

1. Y. Li, G. W. Meng, and L. D. Zhang, Appl. Phys. Lett. 76, 2011 (2000). 10.1063/1.126238
2. X. Su, Z. J. Zhang, and M. M. Zhu, Appl. Phys. Lett. 88, 061913 (2006). 10.1063/1.2172716
3. Y. Wang, Z. L. Liao, G. W. She, L. X. Mu, D. M. Chen, and W. S. Shi, Appl. Phys. Lett. 98, 203108 (2011). 10.1063/1.3590926
4. S. M. Li, B. J. Kwon, H. S. Kwack, L. H. Jin, Y. H. Cho, Y. S. Park, M. S. Han, and Y. S. Park, J. Appl. Phys. 107, 033513 (2010). 10.1063/1.3284959
5. K. Ueda, H. Tabata, and T. Kawai, Appl. Phys. Lett. 79, 988 (2001). 10.1063/1.1384478
6. J. Salfi, U. Philipose, S. Aouba, S. V. Nair, and H. E. Ruda, Appl. Phys. Lett. 90, 032104 (2007). 10.1063/1.2431788
7. M. Belmoubarik, K. Ohtani, and H. Ohno, Appl. Phys. Lett. 92, 191906 (2008). 10.1063/1.2926673
8. Q. Zhang, J. J. Qi, Y. H. Huang, X. Li, and Y. Zhang, Appl. Phys. Lett. 99, 063105 (2011). 10.1063/1.3616141
9. T. Fukumura, Z. W. Jin, A. Ohtomo, H. Koinuma, and M. Kawasaki, Appl. Phys. Lett. 75, 3366 (1999). 10.1063/1.125353
10. T. Fukumura, Z. W. Jin, M. Kawasaki, T. Shono, T. Hasegawa, S. Koshihara, and H. Koinuma, Appl. Phys. Lett. 78, 958 (2001). 10.1063/1.1348323
11. H. J. Lee, S. Y. Jeong, C. R. Cho, and C. H. Park, Appl. Phys. Lett. 81, 4020 (2002). 10.1063/1.1517405
12. S. S. Yan, C. Ren, X. Wang, Y. Xin, Z. X. Zhou, L. M. Mei, M. J. Ren, Y. X. Chen, Y. H. Liu, and H. Garmestani, Appl. Phys. Lett. 84, 2376 (2004). 10.1063/1.1690881
13. B. Panigrahy, M. Aslam, and D. Bahadur, Appl. Phys. Lett. 98, 183109 (2011). 10.1063/1.3574772
14. Z. X. Dai, A. Nurbawono, A. Zhang, M. Zhou, Y. P. Feng, G. W. Ho, and C. Zhang, J. Chem. Phys. 134, 104706 (2011). 10.1063/1.3562375
15. R. Yang, Y. Ding, and Z. L. Wang, Nano Lett. 4, 1309 (2004). 10.1021/nl049317d
16. X. D. Wang, C. J. Summers, and Z. L. Wang, Nano Lett. 4, 423 (2004). 10.1021/nl035102c
17. X. X. Lin, Y. F. Zhu, and W. Z. Shen, J. Phys. Chem. C 113, 1812 (2009). 10.1021/jp810134h
18. R. Beaulac, P. Archer, X. Y. Liu, S. Lee, G. M. Salley, M. Dobrowolska, J. K. Furdyna, and D. R. Gamelin, Nano Lett. 8, 1197 (2008). 10.1021/nl080195p
19. M. Yin, Y. Gu, I. L. Kuskovsky, T. Andelman, Y. Zhu, G. F. Neumark, and S. O'Brien, J. Am. Chem, Soc. 126, 6206 (2004). 10.1021/ja031696
20. H. L. Cao, X. F. Qian, Q. Gong, W. M. Du, X. D. Ma, and Z. K. Zhu, Nanotech. 17, 3632 (2006). 10.1088/0957-4484/17/15/002
21. L. Vayssieres, Adv. Mater. 15, 464 (2003). 10.1002/adma.200390108
22. W. Xiong and S. S. Li, J. Appl. Phys. 105, 094327 (2009). 10.1063/1.3125456
23. J. B. Xia and X. W. Zhang, Eur. Phys. J. B 49, 415 (2006). 10.1140/epjb/e2006-00093-1
24. A. Shabaev and A. L. Efros, Nano Lett. 4, 1821 (2004). 10.1021/nl049216f
25. S. Adachi, Properties of Group-IV and II-VI Semiconductors (Wiley, New York, 2005), Chap., p. 151.
26. V. A. L. Roy, A. B. Djurii, H. Liu, X. X. Zhang, Y. H. Leung, M. H. Xie, J. Gao, H. F. Lui, and C. Surya, Appl. Phys. Lett. 84, 756 (2004). 10.1063/1.1645312