Optical properties of ZnO/MgZnO quantum wells with graded thickness

Journal of Physics D: Applied Physics

Volumn 44, Issue 36, 2011, Pages

  Lv, X Q ^a   Zhang, J Y ^a   Liu, W J ^a   Hu, X L ^a   Chen, M ^a   Zhang, B P ^a,b  

^a XIAMEN UNIVERSITY   (China)

^b SUN YAT SEN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY COMPOSITIONS; BARRIER LAYERS; BLUE SHIFT; CARRIER TRANSFER; EMISSION INTENSITY; EMISSION PEAKS; FREE EXCITONS; LOCALIZATION ENERGY; LOCALIZED CARRIERS; POTENTIAL VARIATIONS; RED SHIFT; REPOPULATION; SAMPLE TEMPERATURE; SINGLE QUANTUM WELL; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; WELL WIDTH; ZNO; ZNO/MGZNO;

EXCITONS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE SPECTROSCOPY; ZINC;

SEMICONDUCTOR QUANTUM WELLS;

EID: 80052322514     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/36/365401     Document Type: Article

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