Coupled electromechanical effects in wurtzite quantum dots with wetting layers in gate controlled electric fields: The multiband case

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 46, Issue , 2012, Pages 97-104

  Prabhakar, Sanjay ^a   Melnik, Roderick V N ^a,b,c   Neittaanmäki, Pekka ^b   Tiihonen, Timo ^b  

^a WILFRID LAURIER UNIVERSITY   (Canada)

^b UNIVERSITY OF JYVÄSKYLÄ   (Finland)

^c BASQUE FOUNDATION FOR SCIENCE   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALN/GAN; BAND ENERGY; BAND STRUCTURE CALCULATION; EFFECTIVE MASS APPROXIMATION; EIGENVALUES; ELECTROMECHANICAL EFFECTS; ELECTRONS AND HOLES; ENERGY DIFFERENCES; ENVELOPE FUNCTIONS; FIRST EXCITED STATE; FULLY-COUPLED; GATE POTENTIALS; MULTIBAND; NON PARABOLICITY; PROBABILITY DENSITIES; STRAIN-DEPENDENT; WETTING LAYER; WURTZITE QUANTUM DOTS; WURTZITES; Z-DIRECTIONS;

ASPECT RATIO; ELECTRIC FIELDS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; VALENCE BANDS; WETTING; ZINC SULFIDE;

EIGENVALUES AND EIGENFUNCTIONS;

EID: 84869056092     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2012.08.024     Document Type: Article

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