Application of high temperature deposited aluminum gate electrode to the fabrication of a-SI:H TFT

Surface and Coatings Technology

Volumn 108-109, Issue , 1998, Pages 588-593

  Shih, P S ^a   Chang, T C ^b   Chen, S M ^c   Feng, M S ^c   Peng, D Z ^a   Chang, C Y ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c NONE

Author keywords

A Si:H TFT; Al; Gate electrode; Hillock

Indexed keywords

ALUMINUM; AMORPHOUS FILMS; CARRIER MOBILITY; DEPOSITION; ELECTRODES; LIQUID CRYSTAL DISPLAYS; MORPHOLOGY; SURFACE ROUGHNESS; THERMAL EFFECTS;

GATE ELECTRODES; HILLOCK FORMATION;

THIN FILM TRANSISTORS;

EID: 0011969677     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(98)00640-9     Document Type: Article

References (13)

1. Iwamura E., Onishi T., Yoshikawa K. J. Jpn. Inst. Met. 59:1995;673.
2. Onishi T., Yoshikawa K., Koga Y. R&D Kobe Steel Eng. Rep. 43:1993;31.
3. Onishi T., Iwamura E., Takagi K., Yoshikawa K. J. Vac. Sci. Technol. A. 14(5):1996;2728.
4. Takayama S., Tsutsui N. J. Vac. Sci. Technol. B. 14(5):1996;3257.
5. S.R. Wilson, C.J. Tracy, J.L. Freeman Jr., Handbook of Multilevel Metallization for Integrated Circuits, Noyes Publications, Park Ridge, 1993.
6. S. Wolf, Silicon Processing for the VLSI Era, vol. 2, Lattice Press, Sunset Beach, CA, 1990.
7. Yeh C.F., Cheng J.Y., Lu J.H. Appl. Jpn. J. Appl. Phys. 32:1993;2803.
8. Schwarzer R.A., Gerth D. J. Electron. Mater. 22:1993;607.
9. Gerth D., Schwarzer R.A. Mater. Sci. Forum. 94 95 96:1992;557.
10. Gerth D., Katzer D., Krohn M. Thin Solid Films. 208:1992;67.
11. Cao Martin B., Tracy C.J., Mayer J.W., Hendrickson L.E. Thin Solid Films. 271:1995;64.
12. Cheng Y.C., Sullivan E.A. Surf. Sci. 34:1973;717.
13. Uchida H., Takechi K., Nishida S., Kaneko S. Jpn. J. Appl. Phys. 30:1991;3691.