Geometrical control of photocurrent in active Si nanowire devices

Nano Energy

Volumn 1, Issue 5, 2012, Pages 714-722

  Solanki, Amit ^a   Gentile, Pascal ^a   Calvo, Vincent ^a   Rosaz, Guillaume ^a,b   Salem, Bassem ^b   Aimez, Vincent ^c   Drouin, Dominique ^c   Pauc, Nicolas ^a  

^a UNIV GRENOBLE ALPES   (France)

^b Joseph Fourier University   (France)

^c UNIVERSITÉ DE SHERBROOKE   (Canada)

Author keywords

Absorption; EBIC; Mie resonance; Nanowires; Photocurrent; Photovoltaic devices

Indexed keywords

BULK SILICON; CARRIER DIFFUSION LENGTH; CAVITY MODE; CHEMICAL VAPOR; DIAMETER DEPENDENT; EBIC; ELECTRON-BEAM-INDUCED CURRENT TECHNIQUES; ENHANCED ABSORPTION; GEOMETRICAL CONTROL; LEAKY MODES; LIGHT INTERACTION; LIQUID SOLIDS; MIE RESONANCE; MIE THEORY; PHOTOCURRENT SPECTRUM; PHOTOVOLTAIC DEVICES; PHOTOVOLTAICS; RED SHIFT; RESONANT COUPLINGS; SCHOTTKY JUNCTIONS; SI NANOWIRE; TRANSPORT MEASUREMENTS;

ABSORPTION; ABSORPTION SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; ELECTRIC CURRENTS; LIGHT ABSORPTION; MODULATION; PHOTOCURRENTS; PHOTOVOLTAIC CELLS; SILICON; VAPORS;

NANOWIRES;

EID: 84867100234     PISSN: 22112855     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nanoen.2012.05.010     Document Type: Article

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