-
4
-
-
0037289374
-
-
10.1179/095066003225010182
-
G. Chen, M. S. Dresselhaus, G. Dresselhaus, J.-P. Fleurial, and T. Caillat, Int. Mater. Rev. 48, 45 (2003). 10.1179/095066003225010182
-
(2003)
Int. Mater. Rev.
, vol.48
, pp. 45
-
-
Chen, G.1
Dresselhaus, M.S.2
Dresselhaus, G.3
Fleurial, J.-P.4
Caillat, T.5
-
5
-
-
34250689394
-
-
10.1002/adma.200600527
-
M. S. Dresselhaus, G. Chen, M. Y. Tang, R. G. Yang, H. Lee, D. Z. Wang, Z. F. Ren, J. Fleurial, and P. Gogna, Adv. Mater. 19, 1043 (2007). 10.1002/adma.200600527
-
(2007)
Adv. Mater.
, vol.19
, pp. 1043
-
-
Dresselhaus, M.S.1
Chen, G.2
Tang, M.Y.3
Yang, R.G.4
Lee, H.5
Wang, D.Z.6
Ren, Z.F.7
Fleurial, J.8
Gogna, P.9
-
7
-
-
0000946149
-
-
10.1103/PhysRevB.48.16373
-
R. J. Stoner and H. J. Maris, Phys. Rev. B 48, 16373 (1993). 10.1103/PhysRevB.48.16373
-
(1993)
Phys. Rev. B
, vol.48
, pp. 16373
-
-
Stoner, R.J.1
Maris, H.J.2
-
9
-
-
33645467260
-
-
10.1103/PhysRevB.73.144301
-
H. K. Lyeo and D. G. Cahill, Phys. Rev. B 73, 144301 (2006). 10.1103/PhysRevB.73.144301
-
(2006)
Phys. Rev. B
, vol.73
, pp. 144301
-
-
Lyeo, H.K.1
Cahill, D.G.2
-
12
-
-
33847004341
-
-
10.1063/1.2437685
-
T. Beechem, S. Graham, P. Hopkins, and P. Norris, Appl. Phys. Lett. 90, 054104 (2007). 10.1063/1.2437685
-
(2007)
Appl. Phys. Lett.
, vol.90
, pp. 054104
-
-
Beechem, T.1
Graham, S.2
Hopkins, P.3
Norris, P.4
-
13
-
-
46149121747
-
-
10.1115/1.2897344
-
P. E. Hopkins, P. M. Norris, R. J. Stevens, T. E. Beechem, and S. Graham, ASME J. Heat Transfer 130, 062402 (2008). 10.1115/1.2897344
-
(2008)
ASME J. Heat Transfer
, vol.130
, pp. 062402
-
-
Hopkins, P.E.1
Norris, P.M.2
Stevens, R.J.3
Beechem, T.E.4
Graham, S.5
-
20
-
-
0009647268
-
-
10.1016/0011-2275(70)90077-9
-
N. S. Snyder, Cryogenics 10, 89 (1970). 10.1016/0011-2275(70)90077-9
-
(1970)
Cryogenics
, vol.10
, pp. 89
-
-
Snyder, N.S.1
-
21
-
-
4243174614
-
-
10.1103/PhysRevLett.68.1563
-
R. J. Stoner, H. J. Maris, T. R. Anthony, and W. F. Banholzer, Phys. Rev. Lett. 68, 1563 (1992). 10.1103/PhysRevLett.68.1563
-
(1992)
Phys. Rev. Lett.
, vol.68
, pp. 1563
-
-
Stoner, R.J.1
Maris, H.J.2
Anthony, T.R.3
Banholzer, W.F.4
-
23
-
-
34247347792
-
-
10.1103/PhysRevB.75.144105
-
C. Kimmer, S. Aubry, A. Skye, and P. K. Schelling, Phys. Rev. B 75, 144105 (2007). 10.1103/PhysRevB.75.144105
-
(2007)
Phys. Rev. B
, vol.75
, pp. 144105
-
-
Kimmer, C.1
Aubry, S.2
Skye, A.3
Schelling, P.K.4
-
24
-
-
50449095086
-
-
10.1103/PhysRevB.78.064112
-
S. Aubry, C. J. Kimmer, A. Skye, and P. K. Schelling, Phys. Rev. B 78, 064112 (2008). 10.1103/PhysRevB.78.064112
-
(2008)
Phys. Rev. B
, vol.78
, pp. 064112
-
-
Aubry, S.1
Kimmer, C.J.2
Skye, A.3
Schelling, P.K.4
-
25
-
-
15344348580
-
-
10.1016/j.ijthermalsci.2004.12.006
-
S. Choi and S. Maruyama, Int. J. Therm. Sci. 44, 547 (2005). 10.1016/j.ijthermalsci.2004.12.006
-
(2005)
Int. J. Therm. Sci.
, vol.44
, pp. 547
-
-
Choi, S.1
Maruyama, S.2
-
26
-
-
0037488306
-
-
10.1103/PhysRevB.67.205422
-
C. J. Twu and J. R. Ho, Phys. Rev. B 67, 205422 (2003). 10.1103/PhysRevB.67.205422
-
(2003)
Phys. Rev. B
, vol.67
, pp. 205422
-
-
Twu, C.J.1
Ho, J.R.2
-
27
-
-
33749250427
-
-
10.1103/PhysRevB.74.104304
-
A. J. H. McGaughey, M. I. Hussein, E. S. Landry, M. Kaviany, and G. M. Hulbert, Phys. Rev. B 74, 104304 (2006). 10.1103/PhysRevB.74.104304
-
(2006)
Phys. Rev. B
, vol.74
, pp. 104304
-
-
McGaughey, A.J.H.1
Hussein, M.I.2
Landry, E.S.3
Kaviany, M.4
Hulbert, G.M.5
-
28
-
-
4244037593
-
-
10.1103/PhysRevB.66.024301
-
B. C. Daly, H. J. Maris, K. Imamura, and S. Tamura, Phys. Rev. B 66, 024301 (2002). 10.1103/PhysRevB.66.024301
-
(2002)
Phys. Rev. B
, vol.66
, pp. 024301
-
-
Daly, B.C.1
Maris, H.J.2
Imamura, K.3
Tamura, S.4
-
31
-
-
29544445387
-
-
10.1103/PhysRevB.72.174302
-
Y. Chen, D. Li, J. R. Lukes, Z. Ni, and M. Chen, Phys. Rev. B 72, 174302 (2005). 10.1103/PhysRevB.72.174302
-
(2005)
Phys. Rev. B
, vol.72
, pp. 174302
-
-
Chen, Y.1
Li, D.2
Lukes, J.R.3
Ni, Z.4
Chen, M.5
-
32
-
-
0034301505
-
-
10.1016/S0026-2692(00)00064-1
-
S. Volz, J. B. Saulnier, G. Chen, and P. Beauchamp, Microelectron. J. 31, 815 (2000). 10.1016/S0026-2692(00)00064-1
-
(2000)
Microelectron. J.
, vol.31
, pp. 815
-
-
Volz, S.1
Saulnier, J.B.2
Chen, G.3
Beauchamp, P.4
-
36
-
-
0001476117
-
-
10.1103/PhysRevB.40.3685
-
D. A. Young and H. J. Maris, Phys. Rev. B 40, 3685 (1989). 10.1103/PhysRevB.40.3685
-
(1989)
Phys. Rev. B
, vol.40
, pp. 3685
-
-
Young, D.A.1
Maris, H.J.2
-
41
-
-
33748138231
-
-
10.1103/PhysRevB.74.125402
-
N. Mingo, Phys. Rev. B 74, 125402 (2006). 10.1103/PhysRevB.74.125402
-
(2006)
Phys. Rev. B
, vol.74
, pp. 125402
-
-
Mingo, N.1
-
43
-
-
0000735585
-
-
10.1103/PhysRevB.34.6987
-
K. Ding and H. C. Andersen, Phys. Rev. B 34, 6987 (1986). 10.1103/PhysRevB.34.6987
-
(1986)
Phys. Rev. B
, vol.34
, pp. 6987
-
-
Ding, K.1
Andersen, H.C.2
-
46
-
-
27144458406
-
-
10.1103/PhysRevLett.95.096105
-
N. Mingo and D. A. Broido, Phys. Rev. Lett. 95, 096105 (2005). 10.1103/PhysRevLett.95.096105
-
(2005)
Phys. Rev. Lett.
, vol.95
, pp. 096105
-
-
Mingo, N.1
Broido, D.A.2
-
47
-
-
0542378949
-
-
10.1103/PhysRevB.57.14958
-
G. Chen, Phys. Rev. B 57, 14958 (1998). 10.1103/PhysRevB.57.14958
-
(1998)
Phys. Rev. B
, vol.57
, pp. 14958
-
-
Chen, G.1
-
49
-
-
0001714180
-
-
10.1088/0022-3719/7/22/009
-
S. Simons, J. Phys. C 7, 4048 (1974). 10.1088/0022-3719/7/22/009
-
(1974)
J. Phys. C
, vol.7
, pp. 4048
-
-
Simons, S.1
-
50
-
-
0037428816
-
-
10.1063/1.1543239
-
G. Chen, Appl. Phys. Lett. 82, 991 (2003). 10.1063/1.1543239
-
(2003)
Appl. Phys. Lett.
, vol.82
, pp. 991
-
-
Chen, G.1
-
52
-
-
33746915746
-
-
10.1103/PhysRevB.74.054303
-
J. Wang and J. S. Wang, Phys. Rev. B 74, 054303 (2006). 10.1103/PhysRevB.74.054303
-
(2006)
Phys. Rev. B
, vol.74
, pp. 054303
-
-
Wang, J.1
Wang, J.S.2
-
53
-
-
72849133310
-
-
Ph.D. thesis, Carnegie Mellon University.
-
E. S. Landry, Ph.D. thesis, Carnegie Mellon University.
-
-
-
Landry, E.S.1
-
55
-
-
33645966586
-
-
10.1103/PhysRev.113.1046
-
J. Callaway, Phys. Rev. 113, 1046 (1959). 10.1103/PhysRev.113.1046
-
(1959)
Phys. Rev.
, vol.113
, pp. 1046
-
-
Callaway, J.1
-
56
-
-
61949101430
-
-
10.1103/PhysRevB.79.064301
-
J. E. Turney, E. S. Landry, A. J. H. McGaughey, and C. H. Amon, Phys. Rev. B 79, 064301 (2009). 10.1103/PhysRevB.79.064301
-
(2009)
Phys. Rev. B
, vol.79
, pp. 064301
-
-
Turney, J.E.1
Landry, E.S.2
McGaughey, A.J.H.3
Amon, C.H.4
-
57
-
-
83655206699
-
-
edited by E. Kasper and K. Lyutovich (INSPEC, The Institution of Electrical Engineers, London
-
G. Theodorou, in Properties of Silicon Germanium and SiGe:Carbon, edited by, E. Kasper, and, K. Lyutovich, (INSPEC, The Institution of Electrical Engineers, London, 2000), pp. 91-93.
-
(2000)
Properties of Silicon Germanium and SiGe:Carbon
, pp. 91-93
-
-
Theodorou, G.1
-
58
-
-
4243729387
-
-
10.1103/PhysRevLett.60.2379
-
E. R. Cowley, Phys. Rev. Lett. 60, 2379 (1988). 10.1103/PhysRevLett.60. 2379
-
(1988)
Phys. Rev. Lett.
, vol.60
, pp. 2379
-
-
Cowley, E.R.1
-
59
-
-
0344341434
-
-
10.1080/00268979400100171
-
T. Ikeshoji and B. Hafskjold, Mol. Phys. 81, 251 (1994). 10.1080/00268979400100171
-
(1994)
Mol. Phys.
, vol.81
, pp. 251
-
-
Ikeshoji, T.1
Hafskjold, B.2
-
62
-
-
72849150966
-
-
Our estimate of the experimental Si/Ge thermal boundary resistance can only be considered accurate to an order of magnitude for two reasons. First, the interfaces are not isolated from each other, as they are separated by a distance much less than the bulk phonon mean free paths [e.g., the average phonon mean free path in Si is estimated to be 300 nm at room temperature (Ref.)]. Second, the lattice mismatch between Si and Ge will lead to strain-induced defects (e.g., misfit dislocations) at a realistic Si/Ge interface (Refs.).
-
Our estimate of the experimental Si/Ge thermal boundary resistance can only be considered accurate to an order of magnitude for two reasons. First, the interfaces are not isolated from each other, as they are separated by a distance much less than the bulk phonon mean free paths [e.g., the average phonon mean free path in Si is estimated to be 300 nm at room temperature (Ref.)]. Second, the lattice mismatch between Si and Ge will lead to strain-induced defects (e.g., misfit dislocations) at a realistic Si/Ge interface (Refs.).
-
-
-
-
64
-
-
72849133551
-
-
www.gnu.org/software/gsl/
-
-
-
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