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Volumn 80, Issue 16, 2009, Pages

Thermal boundary resistance predictions from molecular dynamics simulations and theoretical calculations

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EID: 72849116760     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.165304     Document Type: Article
Times cited : (322)

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    • Our estimate of the experimental Si/Ge thermal boundary resistance can only be considered accurate to an order of magnitude for two reasons. First, the interfaces are not isolated from each other, as they are separated by a distance much less than the bulk phonon mean free paths [e.g., the average phonon mean free path in Si is estimated to be 300 nm at room temperature (Ref.)]. Second, the lattice mismatch between Si and Ge will lead to strain-induced defects (e.g., misfit dislocations) at a realistic Si/Ge interface (Refs.).
    • Our estimate of the experimental Si/Ge thermal boundary resistance can only be considered accurate to an order of magnitude for two reasons. First, the interfaces are not isolated from each other, as they are separated by a distance much less than the bulk phonon mean free paths [e.g., the average phonon mean free path in Si is estimated to be 300 nm at room temperature (Ref.)]. Second, the lattice mismatch between Si and Ge will lead to strain-induced defects (e.g., misfit dislocations) at a realistic Si/Ge interface (Refs.).
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