Analysis of Si, InAs, and Si-InAs tunnel diodes and tunnel FETs using different transport models

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2011, Pages 263-266

  Schenk, Andreas ^a   Rhyner, Reto ^a   Luisier, Mathieu ^b   Bessire, Cedric ^c  

^a ETH ZURICH   (Switzerland)

^b PURDUE UNIVERSITY   (United States)

^c IBM RESEARCH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND TO BAND TUNNELING; CURRENT LEVELS; DIFFERENT TRANSPORT MODELS; EXPERIMENTAL DATA; HETERO DEVICES; INAS; ON-CURRENTS; ORDERS OF MAGNITUDE; TUNNEL FET; TUNNEL MODEL;

COMPUTER SIMULATION; DIODES; INDIUM ARSENIDE; MESFET DEVICES; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SILICON; TUNNEL DIODES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80054993039     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2011.6035075     Document Type: Conference Paper

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