Fabrication of vertical InAs-Si heterojunction tunnel field effect transistors

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2011, Pages 181-182

  Schmid, H ^a   Moselund, K E ^a   Bjork M T ^a   Richter, M ^a   Ghoneim, H ^a   Bessire, C D ^a   Riel, H ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CONVENTIONAL MOSFETS; ELECTRICAL CHARACTERIZATION; MATERIAL COMBINATION; POTENTIAL BENEFITS; SUBSTRATE MATERIAL; TUNNEL FIELD EFFECT TRANSISTOR; TUNNEL FIELDEFFECT TRANSISTOR (TFETS); TUNNELING PROBABILITIES;

ENERGY GAP; GERMANIUM; HETEROJUNCTIONS; MOSFET DEVICES;

SILICON;

EID: 84880733651     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2011.5994479     Document Type: Conference Paper

References (6)

1. T. Baba, Jpn. J. Appl. Phys, Vol. 31, 455-457, 1992
2. S. Mookerjea., D. Mohata, R. Krishnan, J. Sing, A. Vallett, A. Ali, T. Mayer, V. Narayanan, D. Schlom, A. Liu, S. Datta, IEDM, Tech. Dig. 2009, p. 949
3. H. Zhao, Y. Chen, Y. Wang, F. Zhou, F. Xue, J. Lee, IEEE EDL, Vol. 31, 1392, 2010
4. A. Verhulst, W.G. Vanderberghe, K. Maex, S. D. Gendt, M.M. Heyns, G. Groeseneken, EDL, Vol. 29, 1398, 2008
5. K. Tomioka, J. Motohisa, S. Hara, and T. Fukui, Nano Lett. Vol. 8, 3475, 2008
6. M. T. Björk, H. Schmid, C. D. Bessire, K. E. Moselund, H. Ghoneim, S. Karg, E. Lörtscher, H. Riel Appl. Phys. Lett. 97, 163501, 2010