Thermal and Electrical Properties in Plasma-Activation-Sintered Silicon Carbide with Rare-Earth-Oxide Additives

Journal of the American Ceramic Society

Volumn 84, Issue 10, 2001, Pages 2448-2450

  Zhan, Guo Dong ^a   Mitomo, Mamoru ^b   Xie, Rong Jun ^b   Mukherjee, Amiya K ^a  

^a University of California   (United States)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIVES; ANNEALING; CERAMIC MATERIALS; COMPOSITION; DENSITY (SPECIFIC GRAVITY); MIXTURES; PARTICLE SIZE ANALYSIS; SINTERING; THERMAL CONDUCTIVITY; YTTRIUM COMPOUNDS;

CURRENT VOLTAGE METHOD; LASER FLASH TECHNIQUE; PLASMA ACTIVATION SINTERING; RARE EARTH OXIDE;

SILICON CARBIDE;

EID: 0035497587     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.2001.tb01033.x     Document Type: Article

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