Ultra-low-temperature sintering of nanostructured β-SiC

Journal of the American Ceramic Society

Volumn 94, Issue 2, 2011, Pages 324-327

  Lee, Jin Seok ^a   Ahn, Young Soo ^a   Nishimura, Toshiyuki ^b   Tanaka, Hidehiko ^b   Lee, Sea Hoon ^c  

^a Korea Institute of Energy Research (KIER)   (South Korea)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c Korea Institute of Material Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FULL DENSIFICATION; GRAIN SIZE; GRAIN-BOUNDARY DIFFUSION; LOW-TEMPERATURE SINTERING; NANO-STRUCTURED; PRESSING CONDITIONS; RELATIVE DENSITY;

GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; SPARK PLASMA SINTERING;

SILICON CARBIDE;

EID: 79751475659     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2010.04269.x     Document Type: Article

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