P-28: The effect of AC bias frequency on threshold voltage shift of the amorphous oxide TFTs

Digest of Technical Papers - SID International Symposium

Volumn 42 1, Issue , 2011, Pages 1195-1197

  Kim, Sun Jae ^a   Lee, Young Wook ^a,b   Lee, Soo Yeon ^a   Woo, Jong Suk ^a   Kwon, Jang Yeon ^a   Han, Min Koo ^a   Lee, Woo Geun ^b   Yoon, Kap Soo ^b  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; THRESHOLD VOLTAGE;

AMORPHOUS OXIDES; CHARGE ACCUMULATION; DE-TRAPPING; NEGATIVE BIAS; POSITIVE BIAS; THIN-FILM TRANSISTOR (TFTS); THRESHOLD VOLTAGE SHIFTS; TRAPPED CHARGE;

THIN FILM TRANSISTORS;

EID: 84863196735     PISSN: 0097966X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1889/1.3621043     Document Type: Conference Paper

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